A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors

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We examine the Moss–Burstein effect for InN and demonstrate an independent method for determing its magnitude for high carrier concentration material. Consequently it is shown that the extent of the Moss–Burstein effect is less than 0.72 eV for a high carrier concentration sample with a 1.88 eV absorption edge. Early results are also provided for high band‐gap low carrier concentration InN films that can be grown reprodcibly, vindicating the work of early groups in the field. The role of stoichiometry is examined in relation to point defects that appear to be common to many forms of InN. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Process monitoring of microinjection moulding (niM) is of crucial importance when analysing the effect of different parameter settings on the process and then in assessing its quality. Quality factors related to cavity pressure can provide valuable information about the process dynamics and also about the filling behavior of different polymer melts. In this paper, a pressure sensor mounted inside a tool cavity was employed to analyse maximum cavity pressure, pressure increase rate during filling and pressure work. The influence of four ßlM parameters, melt temperature, mould temperature, injection speed, and packing pressure on these three pressure-related process parameters was investigated. A de.sign of experiment study was conducted by moulding a test part, a microfluidic component, in three different polymer materials, PP, ABS, and PC. The results show a similar process behavior for all three polymers, in particular a higher injection speed led to a reduction of the pressure work while a lower mould temperature reduces the pressure rate.

Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity on temperaturedependent CPW line loss at various operating frequency bands are then presented. CPW lines for GaN-on-high resistivity Si are shown to have a pronounced temperature-dependence for temperatures above 150°C and have lower substrate losses for frequencies above the X-band. On the other hand, GaN-on-low resistivity Si is shown to be more temperature-insensitive and have lower substrate losses than even HR-Si for lower operating frequencies. The effect of various CPW geometries on substrate loss is also presented to generalize the discussion. These results are expected to act as a benchmark for temperature dependent substrate loss in GaN-on-Si RF technology.