Electromagnetic only HEMT model for switch design

Zhu, Yu; Wei, Chang; Nohra, George; Zhang, Cindy; Klimashov, Oleksiv; Yin, Hong; Bartle, D.

doi:10.1109/apmc.2009.5385384

Cited by 3 publications

(6 citation statements)

References 4 publications

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“…Some experts think that switch modeling may be beyond a simple lumped‐element approach. For example, an electromagnetic only model for switch design was proposed, Even at relatively low frequencies, that is, Ku band, EM simulation has been used to improve model accuracy. As Reference said, the prediction accuracy can be remarkably improved by taking into account all of the distributed and coupling effects of the HEMT.…”

Section: Introductionmentioning

confidence: 99%

“…For example, an electromagnetic only model for switch design was proposed, Even at relatively low frequencies, that is, Ku band, EM simulation has been used to improve model accuracy. As Reference said, the prediction accuracy can be remarkably improved by taking into account all of the distributed and coupling effects of the HEMT. Although the EM only model is accurate, it needs not only the layout information, but also the process information, since the intrinsic part of the HEMT is even EM simulated.…”

Section: Introductionmentioning

confidence: 99%

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Complete parasitic‐capacitance‐shell extraction of high‐frequency switch‐HEMT equivalent‐circuit model

Yuan

Hu²,

Yang

2020

Int J RF Microw Comput Aided Eng

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This paper presents a new solution to a particular problem of high electron‐mobility transistor (HEMT) equivalent‐circuit modeling, that is, complete parasitic‐capacitance‐shell extraction of high‐frequency single‐gate and dual‐gate switch‐based HEMTs, which is very important to the accuracy of high‐frequency HEMT switch models, but not important in the conventional common‐source HEMT modeling for amplifier‐applications. A full‐wave electromagnetic (EM) analysis based method is proposed to analytically extract the complete parasitic‐capacitance‐shell of single‐gate and dual‐gate switch‐based HEMTs. All the 6 parasitic capacitances of the single‐gate switch‐based HEMT and all the 10 parasitic capacitances of the dual‐gate switch‐based HEMT are extracted by linear equations. No resistance parameter is needed to calculate the capacitance‐to‐ground and the interelectrode‐capacitance, and for the first time, all the 10 parasitic capacitances of the dual‐gate switch‐based HEMT are completely considered and analytically extracted. Then, a consistent and systematic modeling procedure of single‐gate and dual‐gate switch‐based HEMT is verified. With the complete parasitic‐capacitance‐shells extracted, the accurate intrinsic model of the single‐gate HEMT can be directly embedded into the parasitic‐shell of the dual‐gate HEMT. The predicted scattering parameters of the single‐gate and dual‐gate series switches fit well with the measurements up to 40 GHz, and accurate linear scalability are also found.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Complete parasitic‐capacitance‐shell extraction of high‐frequency switch‐HEMT equivalent‐circuit model

Yuan

Hu²,

Yang

2020

Int J RF Microw Comput Aided Eng

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“…Although microwave switches are basically used as linear components in microwave systems, more and more attention has been paid to the prediction of their power carrying capabilities and weak nonlinear characteristics . Small‐signal model cannot predict these nonlinear effects, therefore, accurate and practical large‐signal models of switch‐HEMTs are very important for computer‐aided design (CAD) of modern switching circuits. Although many HEMT models have been embedded in various microwave CAD software, most of these models are designed for amplifiers, and have been found not accurate for switching MMICs design in many foundries .…”

Section: Introductionmentioning

confidence: 99%

“…Small‐signal model cannot predict these nonlinear effects, therefore, accurate and practical large‐signal models of switch‐HEMTs are very important for computer‐aided design (CAD) of modern switching circuits. Although many HEMT models have been embedded in various microwave CAD software, most of these models are designed for amplifiers, and have been found not accurate for switching MMICs design in many foundries . For instance, it was found in References and that most frequently‐used models cannot be used to predict the weak harmonics of the off‐state switches.…”

Section: Introductionmentioning

confidence: 99%

A HEMT large‐signal model for use in the design of microwave switching circuits

Yuan

Yang

2019

Int J RF Microw Comput Aided Eng

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The nonlinear sources of switch-HEMTs have been well analyzed by using the measured data. The small signal intrinsic capacitances (under both positive and negative V ds operation) have been extracted by an extended small signal model. one-dimension capacitance model has been effectively applied to model the small signal incremental capacitances directly extracted from the key operation region, which has also automatically taken into account the surface trapping effects. A new capacitance model has been effectively proposed to well fit the key nonlinear source (the deep subthreshold capacitance) of switch-HEMTs. Simple switching function and additional voltage dependence have been applied to model the wide linear-region (from high-V gs region to deep subthreshold region) of channel current. On/off state small signal insertion loss, small signal isolation, weak harmonics, and power carrying capabilities are accurately predicted by the large signal model. The model shows very good convergence of circuit simulation. Meanwhile, the simple equations and distinguishing among the capacitances accurately make the scaling rules simple and accurate. K E Y W O R D Sharmonic, high electron-mobility transistor (HEMT) switch, large signal model, microwave switch, monolithic microwave integrated circuit (MMIC), small signal model

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“…VOLTAGE DISTRIBUTION INSIDE STACK EM simulation can be a powerful tool for investigating the voltage distribution inside a FET stack. Since MOSFET, being considered as an active device, actually works in its passive states in a switch, EM simulation was performed on the entire MOSFET including both the metal electrodes and the semiconductor channels [7].…”

Section: Introductionmentioning

confidence: 99%

High voltage SOI stacked switch with varying periphery FETs

Zhu

Klimashov

Roy

et al. 2015

2015 Asia-Pacific Microwave Conference (APMC)

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The breakdown voltage of a FET stack is limited by the unequally divided voltage drop among the stacked FETs. A novel stack composed of varying periphery FETs is proposed. Uniform voltage distribution, and thus much higher breakdown voltage, can be achieved by carefully designing the periphery of each FET. A FET stack with varying periphery was designed and fabricated. Significant improvement in breakdown voltage was experimentally confirmed. Unlike the approach of inserting feedforward capacitance, the breakdown voltage increase is achieved without isolation degradation.

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Electromagnetic only HEMT model for switch design

Cited by 3 publications

References 4 publications

Complete parasitic‐capacitance‐shell extraction of high‐frequency switch‐HEMT equivalent‐circuit model

Complete parasitic‐capacitance‐shell extraction of high‐frequency switch‐HEMT equivalent‐circuit model

A HEMT large‐signal model for use in the design of microwave switching circuits

High voltage SOI stacked switch with varying periphery FETs

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