A comprehensive PHEMT core model for switch applications

Wei, Chang; Zhu, Yu; Yin, Hong; Klimashov, Oleksiy; Bartle, D.

doi:10.1109/mwsym.2011.5972576

Cited by 2 publications

(12 citation statements)

References 2 publications

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“…For FET large signal modeling, current FET models included in the foundry PDKs are often found not so accurate for switch MMIC design, hence FET large‐signal models specially designed for high power switch applications are very important. Several articles covering this topic show good results for applications at microwave low‐frequency bands. Some HEMT intrinsic models were designed to predict harmonics at 0.9 GHz and 2 GHz power drive .…”

Section: Introductionmentioning

confidence: 99%

“…Several articles covering this topic show good results for applications at microwave low‐frequency bands. Some HEMT intrinsic models were designed to predict harmonics at 0.9 GHz and 2 GHz power drive . Some inspiring discoveries were found important to accurate nonlinear modeling of single‐gate and multiple‐gate HEMTs, pulsed‐bias CV characteristics were effectively applied to model trapping effects on switch charge model .…”

Section: Introductionmentioning

confidence: 99%

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Direct extraction method of HEMT switch small‐signal model with multiparasitic capacitive current path

Yuan

Yang

et al. 2018

Int J RF Microw Comput Aided Eng

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It has been found that the analytical extraction methods cannot be applied to the usual test structure of the switch high electron-mobility transistor (HEMT) with a large-value gate grounded resistor. The significant effect of the precise multicapacitive current path on switch model precision has also been found. The multicapacitive current path here is different from the seemingly similar hypothesis proposed for the distributed parasitic effects at high frequencies (eg, D-band). In fact, for switch based HEMT, it is important to distinguish between the capacitive current paths accurately even at relatively low frequencies. Due to the existing of the large gate resistance, the usual capacitance mix decreases the accuracy of the switch model significantly. Thus an analytical method has been developed to calculate parasitic capacitances (the capacitance to ground and the interelectrode capacitance) through full-wave electromagnetic analysis. For practical applications and further verification, the whole HEMT switch small-signal models and the direct extraction methods are presented. The simulated results fit well with the measurements up to 40 GHz. K E Y W O R D S electromagnetic analysis, high electron-mobility transistor, interelectrode parasitic capacitance, microwave switches, small-signal model 1 | INTRODUCTION In 1988, Dambrine et al.proposed an analytical way to extract FET small-signal equivalent circuit parameters. 1 All the parasitic parameters were analytically extracted by using cold-FET method. After de-embedding all the parasitic effects from the whole S parameters, the intrinsic parameters were calculated by analytical equations. 2 De-embedding methods, cold-FET techniques, and analytical equations 3 are used by lots of FET small-signal model extraction methods today. Note that Reference 1 also has some limitations, for example, the pinch-off intrinsic model used to determine the parasitic capacitance parameters tends to overestimate the value of the drain to ground capacitance (C pd ). The high positive gate bias condition used to determine the parasitic inductances and resistances have the potential to destroy the gate Schottky diode. 4 In addition, for high electron-mobility transistors (HEMTs), it is difficult to apply enough high gate bias to ignore the gate capacitance effect. 5,6 Many works are making improvements to meet the needs of new semiconductor technologies and new applications like high frequency applications. 7-11 The small-signal modeling is also the basis of the large-signal and noise modeling. [12][13][14] As stated above, lots of articles and effort has been dedicated to common-source FET small-signal modeling, but high-frequency switch FET small-signal modeling is still difficult. Very few works concern switch FET small-signal modeling. [15][16][17][18][19][20][21] Numerical solutions concern intrinsic effects only and are difficult to meet measured behavior. [15][16][17] The simplified equivalent circuits cannot capture full feature of the switch HEMT at high frequencies. 18,19...

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Direct extraction method of HEMT switch small‐signal model with multiparasitic capacitive current path

Yuan

Yang

et al. 2018

Int J RF Microw Comput Aided Eng

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“…High switching speed, high reliability, easy integration into monolithic microwave integrated circuits (MMICs), and low power consumption make high electron mobility transistors (HEMTs) widely used in switching circuits . Although microwave switches are basically used as linear components in microwave systems, more and more attention has been paid to the prediction of their power carrying capabilities and weak nonlinear characteristics . Small‐signal model cannot predict these nonlinear effects, therefore, accurate and practical large‐signal models of switch‐HEMTs are very important for computer‐aided design (CAD) of modern switching circuits.…”

Section: Introductionmentioning

confidence: 99%

“…Small‐signal model cannot predict these nonlinear effects, therefore, accurate and practical large‐signal models of switch‐HEMTs are very important for computer‐aided design (CAD) of modern switching circuits. Although many HEMT models have been embedded in various microwave CAD software, most of these models are designed for amplifiers, and have been found not accurate for switching MMICs design in many foundries . For instance, it was found in References and that most frequently‐used models cannot be used to predict the weak harmonics of the off‐state switches.…”

Section: Introductionmentioning

confidence: 99%

“…Although many HEMT models have been embedded in various microwave CAD software, most of these models are designed for amplifiers, and have been found not accurate for switching MMICs design in many foundries . For instance, it was found in References and that most frequently‐used models cannot be used to predict the weak harmonics of the off‐state switches. The predicted harmonics can be 20 dB higher than the measured data, and the scalability of switch model is almost never discussed .…”

Section: Introductionmentioning

confidence: 99%

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A HEMT large‐signal model for use in the design of microwave switching circuits

Yuan

Yang

2019

Int J RF Microw Comput Aided Eng

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The nonlinear sources of switch-HEMTs have been well analyzed by using the measured data. The small signal intrinsic capacitances (under both positive and negative V ds operation) have been extracted by an extended small signal model. one-dimension capacitance model has been effectively applied to model the small signal incremental capacitances directly extracted from the key operation region, which has also automatically taken into account the surface trapping effects. A new capacitance model has been effectively proposed to well fit the key nonlinear source (the deep subthreshold capacitance) of switch-HEMTs. Simple switching function and additional voltage dependence have been applied to model the wide linear-region (from high-V gs region to deep subthreshold region) of channel current. On/off state small signal insertion loss, small signal isolation, weak harmonics, and power carrying capabilities are accurately predicted by the large signal model. The model shows very good convergence of circuit simulation. Meanwhile, the simple equations and distinguishing among the capacitances accurately make the scaling rules simple and accurate. K E Y W O R D Sharmonic, high electron-mobility transistor (HEMT) switch, large signal model, microwave switch, monolithic microwave integrated circuit (MMIC), small signal model

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A comprehensive PHEMT core model for switch applications

Cited by 2 publications

References 2 publications

Direct extraction method of HEMT switch small‐signal model with multiparasitic capacitive current path

Direct extraction method of HEMT switch small‐signal model with multiparasitic capacitive current path

A HEMT large‐signal model for use in the design of microwave switching circuits

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