The behaviors of the gate induced drain leakage (GIDL) stress during the single and alternating stresses were investigated. A combination of threshold voltage Vth and GIDL current Igidl has been applied to investigate n-channel metal-oxide-semiconductor field-effect transistors with different gate oxide thicknesses. The recovery and enhancement of Vth depending on the gate oxide thickness, are found to result from the GIDL stress in the two processes. This study reveals that different behaviors of GIDL stress for different gate oxide thicknesses are attributed to the rivalship between the hole-induced carrier mobility increase and the interface states-induced increase in lightly doped drain resistance.

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