A Quasi-3-D Scaling Length Model for Trapezoidal FinFET and Its Application to Subthreshold Behavior Analysis

A comprehensive investigation of the subthreshold behavior of a graded channel dual-material elliptical gate-all-around MOSFET has been presented in this research. Detailed analysis of the device's immunity over the various short channel effects like threshold voltage roll-off, draininduced barrier lowering, subthreshold swing and hot carrier effect have been conducted using the central potential where the latter has been derived using the quasi-3-D scaling length concept. The analytical results have been verified using ATLAS simulation data.

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“…n n e Here, 13 Substituting equation (13), that is, the value of inversion charge carriers in equation (12) we get,…”

Section: Current Modelingmentioning

confidence: 99%

Analysis of short channel characteristics in graded channel dual-material elliptical gate-all-around (GC DM EGAA) MOSFET

Banerjee

Sarkar

2019

Semicond. Sci. Technol.

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“…Hence, SOI based FinFETs are the center of attraction nowadays. Detailed studies of SOI based FinFETs are presented in [12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

“…Constructing tri-gate FinFETs different approaches has been followed in recent years like SOI based FinFETs, bulk FinFET [6][7][8][9][10][11][12][13][14][15][16][17][18]. The inverted-T structure FinFET [19] is also designed which provides better drain current compared to the SOI based FinFET.…”

Section: Introductionmentioning

confidence: 99%

Influence of oxide thickness variation on analog and RF performances of SOI FinFET

Tripathy

Acharya

Rout³

et al. 2022

FACTA U EE

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This paper focuses on the impact of variation in the thickness of the oxide (SiO2) layer on the performance parameters of a FinFET analysed by varying the oxide layer thickness in the range of 0.8nm to 3nm. While varying the oxide layer thickness, the overall width of the FinFET is fixed at a value 30nm, and the FinFET parameters are analysed for structures with different oxide layer thickness. The parameters like drain current, transconductance, transconductance generation factor, parasitic capacitances, output conductance, cut-off frequency, maximum frequency, GBW, energy and power consumption are calculated to study the influence of FinFET oxide (SiO2) layer thickness variation. It is detected from the result and analysis that the drain current, transconductance, transconductance generation factor, gain bandwidth and output conductance improve with decrement in oxide layer thickness whereas, the parasitic capacitances, cut-off frequency and maximum frequency degrade when there is a reduction in oxide (SiO2) layer thickness. The parameters like energy and consumed power of FinFET get better when the oxide (SiO2) layer thickness increases.

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“…These devices possess improved controllability over lower leakage currents, SCEs and better yield [13,14]. FinFET is one of the evolutionary techniques for application based less-power consuming circuits as it displays Influence of Variation in Oxide layer Thickness on Analog and RF performances of SOI FinFET commendable performance to nullify the short-channel problems due to the fact that multiple gates monitoring a single channel [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Influence of Variation in Oxide layer Thickness on Analog and RF performances of SOI FinFET

Tripathy

Pk³

2021

Preprint

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In this paper, the influence of oxide (SiO2) layer thickness on the different figure of merits of a FinFET is analysed by varying the oxide layer thickness which is present between the gate and the Fin. Here, the overall thickness of the FinFET is taken to be 30nm, and the oxide (SiO2) layer thickness is changed from 0.8 nm to 3nm, and the analog, radio frequency parameters are determined for different structures. The performance parameters like drain current (ID), transconductance generation factor (TGF), transconductance (gm), output conductance (gds), parasitic capacitances like Cgs, Cgd, Cgg, cut-off frequency (fT), gain bandwidth product (GBW) and maximum frequency of oscillation (fmax) are calculated to learn the influence of variation in the FinFET oxide (SiO2) layer thickness. It is detected from the result and analysis that the drain current, output conductance, transconductance generation factor, transconductance and gain bandwidth product improve with decrement in oxide layer thickness. But as a tradeoff, the internal capacitances like Cgs, Cgd, Cgg, maximum frequency of oscillation and cut-off frequency degrade when there is a reduction in oxide (SiO2) layer thickness.

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A Quasi-3-D Scaling Length Model for Trapezoidal FinFET and Its Application to Subthreshold Behavior Analysis

Cited by 16 publications

References 18 publications

Analysis of short channel characteristics in graded channel dual-material elliptical gate-all-around (GC DM EGAA) MOSFET

Analysis of short channel characteristics in graded channel dual-material elliptical gate-all-around (GC DM EGAA) MOSFET

Influence of oxide thickness variation on analog and RF performances of SOI FinFET

Influence of Variation in Oxide layer Thickness on Analog and RF performances of SOI FinFET

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