Behaviors of gate induced drain leakage stress in lightly doped drain n-channel metal-oxide-semiconductor field-effect transistors

Abstract

The behaviors of the gate induced drain leakage (GIDL) stress during the single and alternating stresses were investigated. A combination of threshold voltage Vth and GIDL current Igidl has been applied to investigate n-channel metal-oxide-semiconductor field-effect transistors with different gate oxide thicknesses. The recovery and enhancement of Vth depending on the gate oxide thickness, are found to result from the GIDL stress in the two processes. This study reveals that different behaviors of GIDL stress for different gate oxide thicknesses are attributed to the rivalship between the hole-induced carrier mobility increase and the interface states-induced increase in lightly doped drain resistance.

Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

“…3(a). 23 This is consistent with the previous studies which indicate lucky electron trapping in the oxide near the drain side for n-MOSFETs. 24 However, GIDL current shows hole trapping within the high-k layer for SP device under HCS.…”

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

“…6). Enhanced degradation during GIDL stress after CHC stress is attributed to neutral traps [8]. The hot electrons generated during CHC stress are injected and trapped into the gate oxide, hence the V th increases and SS is degraded.…”

“…This GIDL current induces hot-hole effect which can introduce holes trapping in gate oxides and result in the device degradation [8]. In MOSFETs with high-k gate dielectrics, GIDL current increases due to enhanced gate oxide electric field [9] and remote interface traps [10].…”

GIDL current degradation in LDD nMOSFET under hot hole stress

“…Cheng studied the anneal of LDD nMOSFET's damage in hydrogen or deuterium based on the GIDL current OE6 . Recently, Hu OE7 discussed HCI effects on ultra-thin LDD nMOSFET through GIDL current degradation and Reference [8] also used this method to investigate the oxide degradation under alter stresses in the LDD nMOSFET's. However, all of them only focused on the varieties of current value of certain point at GIDL current curve pre and post the stress and cannot have a further research on this GIDL current degradation itself.…”