GIDL current degradation in LDD nMOSFET under hot hole stress

Abstract

The degradation of gate-induced drain leakage (GIDL) current in LDD nMOSFET under hot holes stress is studied in depth based on its parameter I DIFF . I DIFF is the difference of GIDL currents measured under two conditions of drain voltage V D D 1.4 V and gate voltage V G D 1:4 V while V DG is fixed. After the stress GIDL currents decay due to holes trapping in the oxide around the gate-to-drain overlap region. These trapped holes diminish E X which is the deference of the lateral electrical field of these two symmetrical measurement conditions in the overlap region so as to make I DIFF lessening. I DIFF extracted from GIDL currents decreases with increasing stress time t. The degradation shifts of I DIFF; MAX .I DIFF; MAX / follows a power law against t: I DIFF; MAX / t m , m D 0.3. Hot electron stress is performed to validate the related mechanism.