Abstract:The degradation of gate-induced drain leakage (GIDL) current in LDD nMOSFET under hot holes stress is studied in depth based on its parameter I DIFF . I DIFF is the difference of GIDL currents measured under two conditions of drain voltage V D D 1.4 V and gate voltage V G D 1:4 V while V DG is fixed. After the stress GIDL currents decay due to holes trapping in the oxide around the gate-to-drain overlap region. These trapped holes diminish E X which is the deference of the lateral electrical field of these two… Show more
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