Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

Kim, Dongwoo; Lee, Seonhaeng; Kim, Cheolgyu; Lee, Chiho; Park, Jeongsoo; Kang, Bongkoo

doi:10.1016/j.microrel.2012.06.011

Cited by 1 publication

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References 14 publications

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“…In summary, the most obvious degradation for I SUB is set at the tested device W/L = 0.5/0.03 µm and the stress voltage at V GS = V DS = 1.6 V. The other degradation index V T shifts with different channel lengths, and the different stress voltages are shown in Figure 6. The V T shift observed at L = 0.03 µm and the stress voltage V GS = V DS = 1.6 V are the worst [34][35][36]. However, as the stress condition is at the higher gate field, the distribution of V T shift at L = 0.03 µm and 0.11 µm is similar, as shown in Figure 6b,d, but not at the lower field, as shown in Figure 6a,c.…”

Section: Sub and V T Degradation After Hc Stressesmentioning

confidence: 73%

Hot Carrier Stress Sensing Bulk Current for 28 nm Stacked High-k nMOSFETs

et al. 2020

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This work primarily focuses on the degradation degree of bulk current (IB) for 28 nm stacked high-k (HK) n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs), sensed and stressed with the channel-hot-carrier test and the drain-avalanche-hot-carrier test, and uses a lifetime model to extract the lifetime of the tested devices. The results show that when IB reaches its maximum, the ratio of VGS/VDS values at this point, in the meanwhile, gradually increases in the tested devices from the long-channel to the short ones, not just located at one-third to one half. The possible ratiocination is due to the ON-current (IDS), in which the short-channel devices provide larger IDS impacting the drain junction and generating more hole carriers at the surface channel near the drain site. In addition, the decrease in IB after hot-carrier stress is not only the increment in threshold voltage VT inducing the decrease in IDS, but also the increment in the recombination rate due to the mechanism of diffusion current. Ultimately, the device lifetime uses Berkley’s model to extract the slope parameter m of the lifetime model. Previous studies have reported m-values ranging from 2.9 to 3.3, but in this case, approximately 1.1. This possibly means that the critical energy of the generated interface state becomes smaller, as is the barrier height of the HK dielectric to the conventional silicon dioxide as the gate oxide.

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Section: Sub and V T Degradation After Hc Stressesmentioning

confidence: 73%