A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET

Chiang, Te‐Kuang; Ko, Ying-Wen; Gao, Hong-Wun; Wang, Yeong-Her

doi:10.1109/asicon.2017.8252527

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2019

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“…The carriers remain primarily concentrated in the central position of the channel in the Subthreshold regime. Thus to find an expression for the central potential, we need to follow the quasi-3-D scaling equation [9] which is as follows:…”

Section: Analytical Modelingmentioning

confidence: 99%

Analysis of short channel characteristics in graded channel dual-material elliptical gate-all-around (GC DM EGAA) MOSFET

Banerjee

Sarkar

2019

Semicond. Sci. Technol.

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A comprehensive investigation of the subthreshold behavior of a graded channel dual-material elliptical gate-all-around MOSFET has been presented in this research. Detailed analysis of the device's immunity over the various short channel effects like threshold voltage roll-off, draininduced barrier lowering, subthreshold swing and hot carrier effect have been conducted using the central potential where the latter has been derived using the quasi-3-D scaling length concept. The analytical results have been verified using ATLAS simulation data.

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Section: Analytical Modelingmentioning

confidence: 99%