Stability of the dimer structure formed on Si(100) by ultraclean lowpressure chemicalvapor deposition Recrystallization by rapid thermal annealing of implanted lowpressure chemicalvapordeposited amorphous Si films J. Appl. Phys. 62, 4878 (1987); 10.1063/1.338994Observations on the phase transformation and its effect on the resistivity of WSi2 films prepared by lowpressure chemical vapor deposition

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A metal-insulator transition study of VO 2 thin films grown on sapphire substrates

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