A metal-insulator transition study of VO 2 thin films grown on sapphire substrates

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.

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Graphene quantum capacitors (GQC) are demonstrated to be enablers of radio-frequency (RF) functions through voltage-tuning of their capacitance. We show that GQC complements MEMS and MOSFETs in terms of performance for high frequency analog applications and tunability. We propose a CMOS compatible fabrication process and report the first experimental assessment of their performance at microwaves frequencies (up to 10 GHz), demonstrating experimental GQCs in the pF range with a tuning ratio of 1.34:1 within 1.25 V, and Q-factors up to 12 at 1 GHz. The figures of merit of graphene variable capacitors are studied in detail from 150 to 350 K. Furthermore, we describe a systematic, graphene specific approach to optimize their performance and predict the figures of merit achieved if such a methodology is applied.

This work reports a detailed experimental investigation of the slope of the current switching between OFF and ON states exploiting the metal-insulator-transition in vanadium dioxide devices. The reported devices are CMOS compatible 2-terminal switches. We experimentally demonstrate for the first time the very little dependence on temperature of the steep slope of these switches, ranging from 0.24 mV/decade at room temperature, to 0.38 mV/decade at 50°C. The fabricated devices show excellent on-state conduction, with I ON >1.8 mA/μm or R on <3mΩ/μm, for the whole range of investigated temperatures (from room temperature to the MIT transition temperature), which recommends them as future candidates for steep-slope, highly conductive and temperature-stable switches.Index Terms-Metal-insulator transition, correlated electron systems, steep slope switch, vanadium dioxide. 0741-3106 (c)

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The modulated scattering technique is based on the use of reconfigurable electromagnetic scatterers, structures able to scatter and modulate an impinging electromagnetic field in function of a control signal. The modulated scattering technique is used in a wide range of frequencies up to millimeter waves for various applications, such as field mapping of circuits or antennas, radio-frequency identification devices and imaging applications. However, its implementation in the terahertz domain remains challenging. Here, we describe the design and experimental demonstration of the modulated scattering technique at terahertz frequencies. We characterize a modulated scatterer consisting in a bowtie antenna loaded with a vanadium dioxide switch, actuated using a continuous current. The modulated scatterer behavior is demonstrated using a time domain terahertz spectroscopy setup and shows significant signal strength well above 0.5 THz, which makes this device a promising candidate for the development of fast and energy-efficient THz communication devices and imaging systems. Moreover, our experiments allowed us to verify the operation of a single micro-meter sized VO2 switch at terahertz frequencies, thanks to the coupling provided by the antenna.

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