A Conjoined Electron and Thermal Transport Study of Thermal Degradation Induced During Normal Operation of Multigate Transistors

Mohamed, Mohamed; Akšamija, Zlatan; Vitale, Wolfgang A.; Hassan, Fawad; Park, Kyeong-Hyun; Ravaioli, Umberto

doi:10.1109/ted.2014.2306422

Cited by 19 publications

(9 citation statements)

References 33 publications

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“…Materials in the nanoscale range (1–100 nm) exhibit chemical and physical properties different from those of their bulk counterparts because of quantum effects, higher surface-to-volume ratios, and high activity of surface atoms. − Various industries, such as electronics, pharmaceuticals, and cosmetics, apply nanotechnology-based solutions for improving their products. − Thus, not only scientific researchers but also laypeople must have a fundamental understanding of concepts related to nanoscale science and engineering (NSE). − …”

Section: Introductionmentioning

confidence: 99%

Exploring the Stability of Gold Nanoparticles by Experimenting with Adsorption Interactions of Nanomaterials in an Undergraduate Lab

et al. 2015

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The proposed experiment can help students to understand the factors involved in the stability of gold nanoparticles (Au NPs) by exploring the adsorption interaction between Au NPs and various substances. The students in this study found that the surface plasmon resonance band of Au NP solutions underwent a red shift (i.e., from 520 to 650 nm) because of NaCl-induced aggregation caused by the elimination of the repulsive electrostatic force. In addition, a sufficient amount of bovine serum albumin molecules (29.4 nM) adsorbed on the surface of Au NPs (1.8 nM) through electrostatic interactions provides steric barriers that hinder electrolyte-induced aggregation. This experiment was performed in the fall 2014 semester to improve the recognition of nanoscale science and engineering concepts of undergraduates.

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Section: Introductionmentioning

confidence: 99%

Exploring the Stability of Gold Nanoparticles by Experimenting with Adsorption Interactions of Nanomaterials in an Undergraduate Lab

et al. 2015

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“…(iii) To obtain full generality [ 34 , 35 , 36 , 64 , 65 , 66 , 67 , 68 , 69 ], we must introduce and solve self-consistently the full set of phonon transport equations for each phonon type at each location in the system including internal equilibrium processes such as phonon-phonon scattering and external processes such as boundary scattering. If the phonon distributions are parameterised by a different non-equilibrium value T b (r) for each mode b then it is still relatively easy to proceed; if not, the problem becomes a major challenge.…”

Section: Methodology and Modelsmentioning

confidence: 99%

“…The double integral is over the whole cross-section. Equation (68) shows that the probability of an electron going from mode m in cross section i to mode l in cross-section i + 1 depends on the overlap between wavefunctions. It should be noted that if the potential energy in the cross-sections are similar the above integral between two different modes is zero.…”

Section: Device Structure and The 1d Representationmentioning

confidence: 99%

Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation

Martı́nez

Barker

2020

Materials

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A review and perspective is presented of the classical, semiclassical and fully quantum routes to the simulation of electrothermal phenomena in ultrascaled silicon nanowire fieldeffect transistors. It is shown that the physics of ultrascaled devices requires at least a coupled electron quantum transport semiclassical heat equation model outlined here. The importance of the local density of states (LDOS) is discussed from classical to fully quantum versions. It is shown that the minimal quantum approach requires selfconsistency with the Poisson equation and that the electronic LDOS must be determined within at least the selfconsistent Born approximation. To bring in this description and to provide the energy resolved local carrier distributions it is necessary to adopt the nonequilibrium Green function (NEGF) formalism, briefly surveyed here. The NEGF approach describes quantum coherent and dissipative transport, Pauli exclusion and nonequilibrium conditions inside the device. There are two extremes of NEGF used in the community. The most fundamental is based on coupled equations for the Green functions electrons and phonons that are computed at the atomically resolved level within the nanowire channel and into the surrounding device structure using a tight binding Hamiltonian. It has the advantage of treating both the nonequilibrium heat flow within the electron and phonon systems even when the phonon energy distributions are not described by a temperature model. The disadvantage is the grand challenge level of computational complexity. The second approach, that we focus on here, is more useful for fast multiple simulations of devices important for TCAD (Technology Computer Aided Design). It retains the fundamental quantum transport model for the electrons but subsumes the description of the energy distribution of the local phonon subsystem statistics into a semiclassical Fourier heat equation that is sourced by the local heat dissipation from the electron system. It is shown that this selfconsistent approach retains the salient features of the fullscale approach. For focus, we outline our electrothermal simulations for a typical narrow Si nanowire gate allaround fieldeffect transistor. The selfconsistent Born approximation is used to describe electronphonon scattering as the source of heat dissipation to the lattice. We calculated the effect of the device selfheating on the current voltage characteristics. Our fast and simpler methodology closely reproduces the results of a more fundamental computeintensive calculations in which the phonon system is treated on the same footing as the electron system. We computed the local power dissipation and “local lattice temperature” profiles. We compared the selfheating using hot electron heating and the Joule heating, i.e., assuming the electron system was in local equilibrium with the potential. Our simulations show that at low bias the source region of the device has a tendency to cool down for the case of the hot electron heating but not for the case of Joule heating. Our methodology opens the possibility of studying thermoelectricity at nanoscales in an accurate and computationally efficient way. At nanoscales, coherence and hot electrons play a major role. It was found that the overall behaviour of the electron system is dominated by the local density of states and the scattering rate. Electrons leaving the simulated drain region were found to be far from equilibrium.

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“…In the semi-classical Boltzmann transport equation (BTE), widely used in device simulation, electrons are treated as point particles [172,173]. Despite its widespread use, this approach is unable to explain some device effects, such as underestimating the threshold voltage in ultra-thin body MOSFET [174,175], and the carrier interactions with the rapid potential changes across heterojunctions.…”

Section: Wigner Formalismmentioning

confidence: 99%

Electronic Transport and Thermopower in 2D and 3D Heterostructures—A Theory Perspective

2019

Self Cite

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The impact of interfaces and heterojuctions on the electronic and thermoelectric transport properties of materials is discussed herein. Recent progress in understanding electronic transport in heterostructures of 2D materials ranging from graphene to transition metal dichalcogenides, their homojunctions (grain boundaries), lateral heterojunctions (such as graphene/MoS 2 lateral interfaces), and vertical van der Waals heterostructures is reviewed. Work on thermopower in 2D heterojunctions, as well as their applications in creating devices such as resonant tunneling diodes (RTDs), is also discussed. Last, the focus turns to work in 3D heterostructures. While transport in 3D heterostructures has been researched for several decades, here recent progress in theory and simulation of quantum effects on transport via the Wigner and non-equilibrium Green's functions approaches is reviewed. These simulation techniques have been successfully applied toward understanding the impact of heterojunctions on transport properties and thermopower, which finds applications in energy harvesting, and electron resonant tunneling, with applications in RTDs. In conclusion, tremendous progress has been made in both simulation and experiments toward the goal of understanding transport in heterostructures and this progress will soon be parlayed into improved energy converters and quantum nanoelectronic devices.

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A Conjoined Electron and Thermal Transport Study of Thermal Degradation Induced During Normal Operation of Multigate Transistors

Cited by 19 publications

References 33 publications

Exploring the Stability of Gold Nanoparticles by Experimenting with Adsorption Interactions of Nanomaterials in an Undergraduate Lab

Exploring the Stability of Gold Nanoparticles by Experimenting with Adsorption Interactions of Nanomaterials in an Undergraduate Lab

Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation

Electronic Transport and Thermopower in 2D and 3D Heterostructures—A Theory Perspective

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