Quantitative mass and energy dispersive elastic recoil spectrometry: Resolution and efficiency considerations

Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)

“…The elemental composition of the as-deposited films was obtained by time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) at an accuracy of  5% for Zr and  3% for B. The measurements were carried out with a 36 MeV 127 I 8+ ion beam using the set-up at Uppsala University [24,25]. The incident angle of primary ions and exit angle of recoils were both 67.5 ° to the sample surface normal giving a recoil angle of 45 °.…”

Epitaxial growth and electrical transport properties of Cr2GeC thin films

“…The measurements were performed with a 40 MeV 1 27I 9+ ion beam using the setup at Uppsala University. 38 The recoil angle was 45 • , while the incident angle of primary ions and the exit angle of recoils were both set to 67.5 • relative to the surface normal. All spectra were analyzed using the CONTES code 39 to obtain relative atomic concentration profiles from the recoil energy of each element.…”

Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

“…Here, a 40 MeV 127 I 9+ beam was directed to the films at an incident angle of 67.5° with respect to the surface normal, and the recoils were detected at an angle of 45° [26,27]. All spectra were analyzed using the CONTES code [28], where the recoil energy of each element was converted to relative atomic concentration profiles.…”