Epitaxial ZrB2 thin films were deposited at a temperature of 900 °C on 4H-SiC(0001) and Si (111) substrates by magnetron sputtering from a ZrB2 source at high rate ~80 nm/min. The films were analyzed by thin film X-ray diffraction including pole figure measurements and reciprocal space mapping as well as high resolution electron microscopy.

ZrB2 thin films have been synthesized using direct current magnetron sputtering from a ZrB2 compound target onto 4H-SiC(0001) and Si (100)

Hard and elastic epitaxial ZrB2 thin films on Al2O3(0001) substrates deposited by magnetron sputtering from a ZrB2 compound target

, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power, 2015, Journal of Crystal Growth, (430) KeywordsA1. X-ray diffraction; A1. X-ray photoelectron spectroscopy; A3. Physical vapor deposition processes; B1. Borides