Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)

Abstract

ZrB2 thin films have been synthesized using direct current magnetron sputtering from a ZrB2 compound target onto 4H-SiC(0001) and Si (100)

Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power

“…In contrast, we [14] and others [9,10,18] have shown that it is possible to grow crystalline films also at temperatures below 200 °C. Characteristic for these studies are a short target-to-substrate distance (5.5 cm or 7 cm) and high sputtering powers applied to the targets ranging from 2.8 Wcm -2 to 11.32 Wcm -2 .…”

“…ZrB2 thin films can be synthesized by sputtering from a compound or composite target [7][8][9][10][11][12][13][14][15]. This is the predominant synthesis route, given the lack of a suitable boron precursor for reactive sputtering.…”

“…Recently, we demonstrated that stoichiometric ZrB2 thin films with a low fraction of contaminants can be deposited from a ZrB2 compound target in an industrial coating system [14]. For growth of such films, we applied a combination of a relatively short target-to-substrate distance of 7 cm, high sputtering power on the target of 11.36 Wcm -2 , a short deposition time of 100 s, and in a geometry where the sputtered material arrives nearly perpendicular to the substrate.…”

“…Characteristic for these studies are a short target-to-substrate distance (5.5 cm or 7 cm) and high sputtering powers applied to the targets ranging from 2.8 Wcm -2 to 11.32 Wcm -2 . Films grown on 4H-SiC(0001) substrates without external heating are 0001-oriented and fiber textured [14]. When the deposition temperature is increased up to 550 °C the films exhibit a more random growth behavior with an increasing contribution from 101 ̅ 1-oriented grains [14].…”

“…Films grown on 4H-SiC(0001) substrates without external heating are 0001-oriented and fiber textured [14]. When the deposition temperature is increased up to 550 °C the films exhibit a more random growth behavior with an increasing contribution from 101 ̅ 1-oriented grains [14]. Following those experiences, we demonstrated that it is possible to grow epitaxial films of ZrB2 on 4H-SiC(0001) substrates, with the epitaxial relationship of ZrB2(0001)║4H-SiC(0001) and ZrB2[1 1 ̅ 00]║4H-SiC[1 1 ̅ 00], in a laboratory scale ultra-high vacuum (UHV) system at 900 °C [15].…”