Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power

Tengdelius, Lina; Greczyński, Grzegorz; Chubarov, Mikhail; Lu, Jun; Forsberg, Urban; Hultman, Lars; Janzén, Erik; Högberg, Hans

doi:10.1016/j.jcrysgro.2015.08.012

Cited by 37 publications

(27 citation statements)

References 22 publications

(59 reference statements)

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“…In addition, the Zr 3d spectra show the evidence for B-O bonds present in the epitaxial ZrB2 film and in the ZrB2 compound target seen from broad peaks of low intensities at positioned at binding energies at around 193 eV as visible in each respective spectrum. This binding energy is in agreement with the value 193.3 eV that was determined for B2O3 in [25] as well as our observation for ZrB2 films deposited on 4H-SiC(0001) [3]. Furthermore, the peak at 193 eV is shifted by 5 eV eV towards higher binding energy with respect to the Zr-B signal present at ~188 eV, which is consistent with the higher electronegativity of O compared to B.…”

Section: Resultssupporting

confidence: 92%

“…, the binding energies (BE) of the Zr 3d5/2, 3d3/2 and B 1s core-level peaks in the epitaxial ZrB2 film are: 178.9 eV, 181.3 eV and 187.9 eV, respectively. These BEs are in agreement with those determined for epitaxial ZrB2 films deposited on 4H-SiC(0001) in[3] with values of 179.0 eV, 181.3 eV and 188.0 eV, respectively. Furthermore, the binding energies are consistent with reported values for single-crystal bulk ZrB2: 178.9 eV, 181.3 eV and 187.9 eV by Aizawa et al[26] and 179.0 eV, 181.4 eV and 188.0 eV by Singh et al[27].…”

supporting

confidence: 89%

“…Therefore, epitaxial films serve as the better reference material. [3] 179.0 181.3 188.0 Single crystal bulk ZrB2 [26] 178.9 181.3 187.9 Bulk ZrB2 by Singh [27] 179.0 181.4 188.0 ZrB2 compound target* 178.9 181.3 187.9 a-Zr bulk reference* 178.9 181.3 a-Zr films [28] 178.8 181.2 -Nyholm and Mårtensson [29] 178.79 181.21 - [31] and for a-Zr [33]. Sample a (Å) c (Å) ZrB2 [31] 3.169 3.530 Epitaxial ZrB2 film [12] 3.169 3.528 ZrB2 compound target 3.167 3.531 a-Zr [33] 3.232 5.147 a-Zr bulk reference 3.233 5.149…”

Section: Discussionmentioning

confidence: 99%

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Chemical bonding in epitaxial ZrB2 studied by X-ray spectroscopy

et al. 2018

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The chemical bonding in an epitaxial ZrB2 film is investigated by Zr K-edge (1s) X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectroscopies and compared to the ZrB2 compound target from which the film was synthesized as well as a bulk α-Zr reference. Quantitative analysis of X-ray Photoelectron Spectroscopy spectra reveals at the surface: ~5% O in the epitaxial ZrB2 film, ~19% O in the ZrB2 compound target and ~22% O in the bulk α-Zr reference after completed sputter cleaning. For the ZrB2 compound target, X-ray diffraction (XRD) shows weak but visible 111, 111, and 220 peaks from monoclinic ZrO2 together with peaks from ZrB2 and where the intensity distribution for the ZrB2 peaks show a randomly oriented target material. For the bulk α-Zr reference no peaks from any crystalline oxide were visible in the diffractogram recorded from the 0001-oriented metal. The Zr K-edge absorption from the two ZrB2 samples demonstrate more pronounced oscillations for the epitaxial ZrB2 film than in the bulk ZrB2 attributed to the high atomic ordering within the columns of the film. The XANES exhibits no pre-peak due to lack of p-d hybridization in ZrB2, but with a chemical shift towards higher energy of 4 eV in the film and 6 eV for the bulk compared to α-Zr (17.993 keV) from the charge-transfer from Zr to B. The 2 eV larger shift in bulk ZrB2 material suggests higher oxygen content than in the epitaxial film, which is supported by XPS. In EXAFS, the modelled cell-edge in ZrB2 is slightly smaller in the thin film (a=3.165 Å, c=3.520 Å) in comparison to the bulk target material (a=3.175 Å, c=3.540 Å) while in hexagonal closest-packed metal (α-phase, a=3.254 Å, c=5.147 Å). The modelled coordination numbers show that the EXAFS spectra of the epitaxial ZrB2 film is highly anisotropic with strong in-plane contribution, while the bulk target material is more isotropic. The Zr-B distance in the film of 2.539 Å is in agreement with the calculated value from XRD data of 2.542 Å. This is slightly shorter compared to that in the ZrB2 compound target 2.599 Å, supporting the XANES results of a higher atomic order within the columns of the film compared to bulk ZrB2.

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Section: Resultssupporting

confidence: 92%

supporting

confidence: 89%

Section: Discussionmentioning

confidence: 99%

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Chemical bonding in epitaxial ZrB2 studied by X-ray spectroscopy

et al. 2018

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“…The ZrB2 film shows a preferential growth along c-axis, evidenced by the intense ZrB2 0001, 0002, and 0003 peaks, located at 25.3°, 51.8°, and 82°, respectively. Two weak peaks, located at 32.7° and 41.8° and corresponding to 101 ̅ 0 and 101 ̅ 1 reflections of ZrB2, respectively, can be observed, indicating minor inclusion of other oriented grains as reported in our previous study [30,31]. In addition, only GaN 0002 and 0004 reflections are present in the diffraction patterns, indicating that wurtzite GaN NRs were preferentially grown along 0001 direction in all three samples.…”

Section: Structural Characterizationssupporting

confidence: 74%

“…The films were grown for 5 min to a thickness of~400 nm. For further details of the deposition conditions for ZrB 2 , the reader is referred to [30,31].…”

Section: Methodsmentioning

confidence: 99%

Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates

et al. 2017

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Abstract:We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically Si, SiC, TiN/Si, ZrB 2 /Si, ZrB 2 /SiC, Mo, and Ti. Growth temperature was optimized on Si, TiN/Si, and ZrB 2 /Si, resulting in increased nanorod aspect ratio with temperature. All nanorods exhibit high purity and quality, proved by the strong bandedge emission recorded with cathodoluminescence spectroscopy at room temperature as well as transmission electron microscopy. These substrates/templates are affordable compared to many conventional substrates, and the direct deposition onto them eliminates cumbersome post-processing steps in device fabrication. Thus, magnetron sputter epitaxy offers an attractive alternative for simple and affordable fabrication in optoelectronic device technology.

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Hard Transition-Metal Diboride Coatings

Mikula

2024

Advanced Structured Materials

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Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power

Cited by 37 publications

References 22 publications

Chemical bonding in epitaxial ZrB2 studied by X-ray spectroscopy

Chemical bonding in epitaxial ZrB2 studied by X-ray spectroscopy

Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates

Hard Transition-Metal Diboride Coatings

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