TE to TM converters with constant 45 degrees operation are a key component in OEICs for coherent optical system applications. A passive TE/TM-mode converter with a laterally tilted rib waveguide fabricated on a stepped substrate is proposed and investigated. The conversion effect has been simulated using scalar and vectorial two-dimensional finite difference methods. The device fabricated on (001)-InP/GaInAsP yields 45 degrees conversion with two subsequent elements of half the TE/TM-beatlength at an excess loss of 3 dB
Polarisation diversity heterodyne receiver OEICs including a tunable four-section DBR laser as a focal oscillator have been successfully fabricated for the first time. OEIC design and fabrication are described and first characteristics of the integrated subcomponents and a packaged receiver OEIC are presented
In this paper a model is proposed explaining the mechanism of Zn diffusion across heterointerfaces. The model is based on the interstitial‐substitutional diffusion mechanism. Employing a repetitive algorithm Zn diffusion across heterointerfaces has been simulated such that the evolution of Zn diffusion in time can be calculated. As an application Zn diffusion across three heterointerfaces involved in the fabrication of invertible double heterostructure bipolar transistors (DHBT) (Zn from the gas phase at 823 K) has been numerically calculated. Good agreement between simulated results and experimental data was achieved. The invertible DHBTs were used to build a compact driver circuit with the three transistors involved being interconnected by a common subcollector layer. A current modulation capability up to 2.6 Gbit/s with output currents of more than 50 mA and an ac transconductance of 120 mS were obtained.
This paper reports on 1.3 mu m complex coupled DFB lasers, 1.55 mu m (wavelength selective) photodiodes and passive spot size converters integrated with Y-shaped waveguide structures on InP, developed for further monolithic integration purposes. The characteristics of such IC subintegrations are similar to those of comparable, separately fabricated devices. Results on first somewhat more complex monolithic Y-junction 1.3 mu m/1.5 mu m transmitter/receiver ICs are presented
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