Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications

Hamacher, Michael; Kaiser, R.; Heidrich, H.; Albrecht, P.; Borchert, B.; Janiak, K.; Loffler, R.; Malchow, S.; Rehbein, W.; Schroeter‐Janssen, H.

doi:10.1109/iciprm.2000.850220

Cited by 8 publications

(2 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1,2) Conventional InP-based photonic integrated circuits (PICs) can monolithically integrate laser diodes (LDs), modulators, switches, photodetectors, and passive waveguide components on the same chip. [3][4][5][6][7][8][9] However, a small refractive index contrast in an InP-based waveguide causes a weak vertical optical confinement, which prevents the development of ultra small InP-based PICs. To overcome this problem, we have proposed the III-V CMOS photonics platform that uses a III-V-on-insulator (III-V-OI) wafer.…”

Section: Introductionmentioning

confidence: 99%

Low resistivity lateral P–I–N junction formed by Ni–InGaAsP alloy for carrier injection InGaAsP photonic devices

Park

Takenaka

Takagi

2016

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this study, we investigate low-resistivity InGaAsP lateral P–I–N junctions using Ni–InGaAsP alloy in conjunction with Zn diffusion. It is found that Ni–InGaAsP alloy is formed via a direct reaction between Ni and InGaAsP after annealing at more than 300 °C. The Ni–InGaAsP preserves the initial Schottky junction properties between Ni and InGaAsP, and thus exhibits an ohmic contact for n-InGaAsP and a Schottky contact for p-InGaAsP. Hence, the Ni–InGaAsP alloy can be used instead of the Si ion implantation process to form the P–I–N junction. The Ni–InGaAsP alloy exhibits significantly lower contact resistance and sheet resistance than Si implanted n+-InGaAsP. The InGaAsP lateral P–I–N junction formed with the Ni–InGaAsP alloy and Zn diffusion shows approximately 10 times lower access resistance than the n+-InGaAsP junction. Thus, we successfully achieve large on-current in the lateral P–I–N junction with the Ni–InGaAsP alloy. The fabrication procedure of the lateral P–I–N junction using the Ni–InGaAsP alloy is promising for carrier-injection photonic devices on the III–V CMOS photonics platform.

show abstract

Section: Introductionmentioning

confidence: 99%

Low resistivity lateral P–I–N junction formed by Ni–InGaAsP alloy for carrier injection InGaAsP photonic devices

Park

Takenaka

Takagi

2016

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Additionally, optical losses could be reduced. By eliminating the free-space setup and connector losses using a spot-size converter [154], a net increase around 10 dB in optical power could be achieved. The RF gain would in turn be increased by 20 dB, which would translate into an SFDR increase of 13.33 dB.Hz 2/3 .…”

Section: Linearity and Dynamic Rangementioning

confidence: 99%

Integrated Optical Filters for Microwave Photonic Applications

Fandiño¹,

Antonio²

View full text Add to dashboard Cite

Con estas breves líneas de texto se culminan más de cuatro largos años de trabajo y esfuerzo. Y, con ellas, se cierra también una etapa de mi vida. Esta tesis y lo que para mí representa son fruto y consecuencia del trabajo directo e indirecto de muchas personas. Gracias en primer lugar a mis supervisores, Pascual Muñoz y José Capmany, por haberme dado la oportunidad de descubrir este mundo que es la ciencia y de guiarme a lo largo del camino. Gracias también a mis compañeros del Grupo de ComunicacionesÓpticas y Cuánticas (GCOC), por los momentos que hemos compartido. Un saludo especial para Christian, por nuestras estimulantes conversaciones a la hora del almuerzo; a Manuel, por su paciencia en el laboratorio; y cómo no a Iñigo, mi proselitista compañero de escalada, por su sabiduría de sobremesa y su apoyo en los momentos difíciles. No puedo ni quiero olvidarme de agradecer a Francisco Soares y a Moritz Baier, y a toda la gente del grupo de diseño de láseres en el Fraunhofer Heinrich Hertz Institute, por su hospitalidad y amabilidad, y por haberme brindado la oportunidad de disfrutar de unos mesesúnicos en una ciudad tan especial como Berlín. Gracias también a Marcin y a Stephanos, mis compañeros de laboratorio, por regalarme su amistad y sentido del humor. Porúltimo, quiero dar las gracias a todas aquellas personas que han estado siempre cerca y que forman una parte fundamental de mi vida. A Sonia, porque somos un equipo. Y mis padres, porque si algo soy, a ellos se lo debo. Mamá, espero poder volar cada día más alto, más lejos, mejor.

show abstract

Reliability Assessment of Optoelectronic Systems with Stochastic Interactions under Accelerated Degradation Testing

Truong¹,

Van²,

Mendizabal³

et al. 2019

2019 4th International Conference on System Reliability and Safety (ICSRS)

View full text Add to dashboard Cite

Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications

Cited by 8 publications

References 3 publications

Low resistivity lateral P–I–N junction formed by Ni–InGaAsP alloy for carrier injection InGaAsP photonic devices

Low resistivity lateral P–I–N junction formed by Ni–InGaAsP alloy for carrier injection InGaAsP photonic devices

Integrated Optical Filters for Microwave Photonic Applications

Reliability Assessment of Optoelectronic Systems with Stochastic Interactions under Accelerated Degradation Testing

Contact Info

Product

Resources

About