Party membership is usually explained either by resource-based models such as the socioeconomic standard model or with the incentives that a membership can provide. The former approach stresses the role of skills, availability, and social position, while the latter explains membership as an individual cost–benefit calculation. These two aspects are likely interlinked, but so far no empirical combination of both explanations exists. This analysis conventionalizes a typology of young party members that links incentives and resources. A survey among young party members of the German Social Democratic Party (N = 4006) shows that three different types of members can be identified combining incentives and resources. I present a membership typology where the basic conflict between members is whether they seek professional benefits.
SUMMARYThis contribution presents a full MMIC chip set, transmit and receive RF frontend and data transmission experiments at a carrier frequency of 300 GHz and with data rates of up to 64 Gbit/s. The radio is dedicated to future high data rate indoor wireless communication, serving application scenarios such as smart offices, data centers and home theaters. The paper reviews the underlying high speed transistor and MMIC process, the performance of the quadrature transmitter and receiver, as well as the local oscillator generation by means of frequency multiplication. Initial transmission experiments in a single-input single-output setup and zero-IF transmit and receive scheme achieve up to 64 Gbit/s data rates with QPSK modulation. The paper discusses the current performance limitations of the RF frontend and will outline paths for improvements in view of achieving 100 Gbit/s capability.
A five-stage differential SiGe low noise amplifier (LNA) in cascode topology is presented. Transformer coupling is used between the stages to obtain inter-stage matching. The single ended input and output of the LNA are realized by baluns. The LNA has 18 dB of gain at 245 GHz and a 3 dB bandwidth of 8 GHz. A noise figure of 11 1 dB NF of the LNA at 245 GHz was measured by the Y-factor method. These values represent the highest gain and the lowest measured noise figure at 245 GHz reported for a SiGe LNA so far. The LNA draws 82 mA at a supply voltage of 3.7 V. Index Terms-Low noise amplifier (LNA), mm-wave circuit, SiGe.
It is well known that, in the millimeter (mm-wave) and sub-mm-wave range, on-wafer S-parameter measurements are often inaccurate and suffer from serious systematic artifacts. In this paper, we confirm that these artifacts are related to spurious wave modes that are excited and propagate in the substrate. These parasitic wave components may be scattered at neighboring structures on the wafer and cause detrimental crosstalk. While these parasitic components deteriorate the measurement itself, an even more serious complication arises from the fact that these modes are already present in the calibration measurement and are unintentionally imported and superposed to the measurement data. In this paper, we present a new type of RF pad with novel screening features and show that these parasitic modes can be efficiently suppressed by the use of proper on-wafer couple structures. Moreover, a novel calibration substrate and method is presented and demonstrated to be capable to remove spurious artifacts from S-parameter measurements up to 450 GHz.
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