Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere

Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N2 ambient

“…10 The later was investigated by double superlattice structures, and the absolute deviation improves over 40 mm of a 2″ wafer from -4% to -1.5% using TBA/TBP/N 2 instead of the standard process, as expected. [7][8][9] Furthermore, the shift from AsH 3 /PH 3 to TBA/TBP in H 2 and especially the shift from H 2 to N 2 utilizing AsH 3 /PH 3 improves the quaternary composition uniformity in an AIX200 reactor. 2,7,8 The first effect was explained by the more close decomposition temperature of the group-V precursors, thus reduced sensitivity to temperature gradients on the wafer.…”

“…[7][8][9] Furthermore, the shift from AsH 3 /PH 3 to TBA/TBP in H 2 and especially the shift from H 2 to N 2 utilizing AsH 3 /PH 3 improves the quaternary composition uniformity in an AIX200 reactor. 2,7,8 The first effect was explained by the more close decomposition temperature of the group-V precursors, thus reduced sensitivity to temperature gradients on the wafer. The latter is related to less side-and top-wall depositions and a steeper temperature gradient in the gas phase, thus less parasitic losses.…”

“…6 Additionally, the use of N 2 , which has a six times lower heat conductivity compared to H 2 , reduces the side-and top-wall depositions and leads to an increased lateral composition and growth rate uniformity. [7][8][9] Thus the combination of inert N 2 with TBA/TBP provides a raise in process safety and has the potential to increase the uniformity of quaternary material even more.…”

Lasing properties of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA in N2 ambient

“…Device-quality epitaxial layers have been demonstrated for various Al-free group-III/V material systems using this substitute of AsH 3 [6,7], severe problems still exist with respect to the incorporation of oxygen-related deep levels in Alcontaining materials. Research on the replacement of H 2 has revealed that nitrogen can be used for replacing H 2 in MOCVD growth with some special advantages, such as excellent uniformity and a low background doping level [9,10], but all these device achievements employed AsH 3 /PH 3 as the V-group sources. So far, no attempt has been undertaken to grow diode laser materials using both TBA/TBP as group-V sources and N 2 as the carrier gas by MOCVD growth.…”

Study of InGaAsP and GaInP layers grown by MOCVD in pure N2 ambient for InGaAsP/GaAs single QW LD structures

“…Another improvement in safety for MOCVD process is the replacement of the explosive hydrogen carrier gas by an inert nitrogen gas. Recently, nitrogen has been demonstrated to be excellent carrier gas in MOCVD for the growth of GaAs-and InP-based semiconductors [7][8][9], especially for remarkable improvement in epitaxial layer uniformity in terms of thickness and PL wavelength [10].…”