We have developed a write-line-inserted magnetic tunneling junction (MTJ) (WLIM) for use in low-write-current magnetoresistance random access memory (MRAM). The write current of the WLIM was reduced to 0.98mA and its thermal stability factor was 85 for a 0.32×0.48μm2 MTJ. We evaluated the switching property of the WLIM in an external magnetic field (Hsw̱ext) and an internal magnetic field (Hsw̱int). We found that Hsw̱ext was larger than Hsw̱int when the aspect ratio of the MTJs was less than 1.5. Furthermore, we obtained a high write-current magnetic-field efficiency of 13.0Oe∕mA when the aspect ratio of the MTJs was low. These properties mean that the WLIM structure has advantages for use in low-write-current MRAM.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.