14ns write speed 128Mb density Embedded STT-MRAM with endurance&gt;10<sup>10</sup> and 10yrs retention@85°C using novel low damage MTJ integration process

Sato, Hideo; Honjo, H.; Watanabe, Takahito; Niwa, Miki; Koike, Hideaki; Miura, Shigeto; Saito, Takashi; Inoue, Hirofumi; Nasuno, T.; Tanigawa, T.; Noguchi, Y.; Yoshiduka, T.; Yasuhira, M.; Ikeda, Shoji; Kang, Song-Yun; Kubo, Takayasu; Yamashita, Koji; Yagi, Y.; Tamura, Ryo; Endoh, Tetsuo

doi:10.1109/iedm.2018.8614606

Cited by 42 publications

(11 citation statements)

References 7 publications

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“…The STT-based spintronic devices have already demonstrated their commercial value as recently announced mass production of the eMRAM to replace the existing NOR Flash embedded memories (Sato et al, 2018a are naturally expected to complement and extend nonvolatile memory applications as SOT-MRAM. In addition, as human society steps into the era of big data, artificial intelligence, quantum computing, and internet of things, there are also promising opportunities for the nonvolatile spin-orbitronic devices with ultrafast dynamics controllability, excellent energy efficiency, almost unlimited endurance, outstanding stability, radiation resistance, and validated CMOS-compatibility to be explored in related emerging applications as exampled in Figure 2.…”

Section: Emerging Spin-orbitronic Devices Applicationsmentioning

confidence: 99%

Prospect of Spin-Orbitronic Devices and Their Applications

et al. 2020

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Summary Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.

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Section: Emerging Spin-orbitronic Devices Applicationsmentioning

confidence: 99%

Prospect of Spin-Orbitronic Devices and Their Applications

et al. 2020

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“…Another well-established area expanding beyond the development of NV logic is the NV STT-MRAM memory, and recently 1 Gb STT-MRAM (ST-DDR4) chip family named as EMD4E001G was manufactured by Everspin technologies [41]. Due to the latest progress in MRAM fabrication [358,359], ultra-high-density embedded STT-MRAM has opened the way for its use in industrial-grade microcontroller unit (MCU) and IoT applications [360]. MTJ with a high-performance MgO barrier can also be used for flexible wearable spintronic applications, especially for biomedical sensing in early disease diagnosis of HIV-1 antigen p24 [361], low field sensitive sensor for neuronal signal detection, and design of versatile sensors for omnidirectional detection of skin decease.…”

Section: Circuit Perspective-various Hybrid Cmos/mtjmentioning

confidence: 99%

From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review

et al. 2020

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Spintronics is one of the growing research areas which has the capability to overcome the issues of static power dissipation and volatility suffered by the complementary metal-oxide-semiconductor (CMOS) industry. Magnetic tunnel junction (MTJ), one of the prominent spintronic devices, is not only used to develop the fully non-volatile-logic (NV-L) but combines magnetism and electronics to develop next-generation NVmemory (NV-M) and hybrid CMOS/MTJ circuits. To be specific towards hybrid CMOS/MTJ circuits, the fabrication of first hybrid full-adder in 2009, fabrication of MTJ based 240-tile NV-field programmable gate array (NV-FPGA) chip in 2013, fabrication of a 3000-6-input-LUTs based NV-FPGA chip in 2015, fabrication of MTJ based NV-logic-in-memory-large scale integration (NV-LIM-LSI) in 2017 and recently the fabrication of a full hybrid magnetic/CMOS System on Chip (SoC) under EU GREAT Project in 2019 has strengthened the belief and motivated the researcher to be continued in this domain. This review article aims to provide the complete design flow of hybrid CMOS/MTJ circuits developed using one of the fab compatible MTJ spintronic devices and its integration with conventional CMOS logic. The broad coverage of the article is MTJ construction, its switching mechanisms, a brief history of various compact models, reliability issues, and the concept of logic-in-memory (LIM) architecture. Finally, the article concludes with the challenges and future prospects of hybrid CMOS/MTJ circuits, which will motivate people in academia to cultivate research in this domain and industry to realize the prototype for a wide range of potential applications.

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“…STT-MRAM can be integrated in a broad range of applications, from Internet-of-Things to automotive applications [ 3 ] and last level caches [ 8 , 9 , 10 ]. Recently, 1Gb standalone [ 11 ] and embedded STT-MRAM solutions [ 2 , 4 , 12 , 13 ] have been reported and STT-MRAM operation with a timing of a few nanoseconds has been demonstrated [ 8 ]. However, in order to further reduce the timing below the nanosecond range, the required current density becomes quite large.…”

Section: Introductionmentioning

confidence: 99%

Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

et al. 2021

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Spin-orbit torque memory is a suitable candidate for next generation nonvolatile magnetoresistive random access memory. It combines high-speed operation with excellent endurance, being particularly promising for application in caches. In this work, a two-current pulse magnetic field-free spin-orbit torque switching scheme is combined with reinforcement learning in order to determine current pulse parameters leading to the fastest magnetization switching for the scheme. Based on micromagnetic simulations, it is shown that the switching probability strongly depends on the configuration of the current pulses for cell operation with sub-nanosecond timing. We demonstrate that the implemented reinforcement learning setup is able to determine an optimal pulse configuration to achieve a switching time in the order of 150 ps, which is 50% shorter than the time obtained with non-optimized pulse parameters. Reinforcement learning is a promising tool to automate and further optimize the switching characteristics of the two-pulse scheme. An analysis of the impact of material parameter variations has shown that deterministic switching can be ensured for all cells within the variation space, provided that the current densities of the applied pulses are properly adjusted.

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14ns write speed 128Mb density Embedded STT-MRAM with endurance>10¹⁰ and 10yrs retention@85°C using novel low damage MTJ integration process

Cited by 42 publications

References 7 publications

Prospect of Spin-Orbitronic Devices and Their Applications

Prospect of Spin-Orbitronic Devices and Their Applications

From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review

Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

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14ns write speed 128Mb density Embedded STT-MRAM with endurance>1010 and 10yrs retention@85°C using novel low damage MTJ integration process

Cited by 42 publications

References 7 publications

Prospect of Spin-Orbitronic Devices and Their Applications

Prospect of Spin-Orbitronic Devices and Their Applications

From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review

Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning

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14ns write speed 128Mb density Embedded STT-MRAM with endurance>10¹⁰ and 10yrs retention@85°C using novel low damage MTJ integration process