Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm

Ikeda, Shoji; Sato, Hideo; Honjo, H.; Enobio, Eli Christopher I.; Ishikawa, Shinya; Yamanouchi, Michihiko; Fukami, Shunsuke; Kanai, Shun; Matsukura, F.; Endoh, Tetsuo; Ohno, Hideo

doi:10.1109/iedm.2014.7047160

Cited by 29 publications

(23 citation statements)

References 11 publications

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“…That can be explained by the subvolume excitation during the switching 18 . Overall, our study demonstrated that MTJ devices scaled down to 20 nm CD showed excellent TMR, Hc, I C 0, and Δ compared with previous work 6,16 .…”

Section: Electrical Test and Discussionsupporting

confidence: 64%

See 1 more Smart Citation

Scalability of Magnetic Tunnel Junctions Patterned by a Novel Plasma Ribbon Beam Etching Process on 300 mm Wafers

Xue¹,

Kontos²,

Lazik³

et al. 2015

IEEE Trans. Magn.

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The performance of magnetic tunnel junctions (MTJs) over its critical dimension (CD) is critical for application of spin transfer torque magnetic random access memory. To study the CD scaling effects, we designed a series of MTJ CDs and used a novel plasma ribbon beam etching (PRBE) process to pattern the MTJs. PRBE has constant beam density and beam angle distribution across a 300 mm wafer. MTJs patterned by PRBE demonstrated low tunneling magnetoresistance (TMR) degradation from 145% on blanket films to about 130% for MTJ CDs ranging from 100 nm to 20 nm. At 20 nm, MTJ switching current was down to 20 µA, and the thermal stability factor was still above 40, demonstrating good device scalability. 0018-9464 (c)

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Section: Electrical Test and Discussionsupporting

confidence: 64%

“…As STT-MRAM scales down, one of the requirements for MTJ patterning is to control and minimize MTJ performance degradation at small critical dimensions (CDs, defined as MTJ diameters) 6 .…”

mentioning

confidence: 99%

Scalability of Magnetic Tunnel Junctions Patterned by a Novel Plasma Ribbon Beam Etching Process on 300 mm Wafers

Xue¹,

Kontos²,

Lazik³

et al. 2015

IEEE Trans. Magn.

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show abstract

“…1(b) shows perpendicular MTJ and its two different states. In this article, we use in-plane MTJ technology in 45nm technology node [21] and perpendicular MTJ technology in 11nm technology node [22] for investigation.…”

Section: Preliminaries Of Stt-ram and Thermal Dependency Of Mtj Dmentioning

confidence: 99%

Temperature Impact Analysis and Access Reliability Enhancement for 1T1MTJ STT-RAM

Cheng

Yang

et al. 2016

IEEE Trans. Rel.

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Spin-Transfer Torque Magnetic Random Access Memory (STT-RAM) is a promising and emerging technology due to its many advantageous features such as scalability, nonvolatility, density, endurance and fast access speed. However, the operation of STT-RAM is severely affected by environmental factors such as process variations and temperature. As the temperature rockets up in modern computing systems, it is highly desirable to understand thermal impact on STT-RAM operations and reliability. In this paper, a thermal-aware MTJ model, calibrated and validated by experimental measurements, is proposed as the basis for thoroughly thermal aware analysis of 1T1MTJ STT-RAM cell structure. Using this model, we investigate temperature effect on memory cell access behavior in terms of access latency, energy and reliability on 45nm technology node. Thermal impact on more advanced 11nm technology node is also evaluated in the paper. Additionally, we propose a thermal-aware design for STT-RAM sensing circuit using bodybiasing technique, which can enlarge read margin dramatically to enhance read reliability under temperature variations. Moreover, our proposed technique can suppress read disturbance effectively as well. Experimental results show that our proposed sensing circuit can enlarge read margin by 2.47X when reading '0' and 3.15X when reading '1', and reduce read disturbance error rate by 55.6% on average.

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“…As indicated by this equation, decreases with the scaling of the MTJ, resulting in a reduction of data retention time. In this context, double-interface MTJs were proposed to achieve high E at the sub-40 nm technology node [6][7][8][9][10]. Using two coupled ferromagnetic layers as the composite free layer, the equivalent volume of in the double-interface MTJ is increased to 3 improve the thermal stability barrier.…”

Section: Introductionmentioning

confidence: 99%

Magnetization Dynamics Modulated by Dzyaloshinskii-Moriya Interaction in the Double-Interface Spin-Transfer Torque Magnetic Tunnel Junction

Wang

et al. 2019

Nanoscale Res Lett

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Currently double-interface magnetic tunnel junctions (MTJs) have been developed for enhancing the thermal stability barrier at the nanoscale technology node. Dzyaloshinskii–Moriya interaction (DMI) inevitably exists in such devices due to the use of the heavy-metal/ferromagnet structures. Previous studies have demonstrated the detrimental effect of DMI on the conventional single-interface spin-transfer torque (STT) MTJs. Here, in this work, we will prove that the detrimental effect of DMI could be almost eliminated in the double-interface STT-MTJ. This conclusion is attributed to the suppressing effect of Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction on the DMI. Detailed mechanisms are analyzed based on the theoretical models and micromagnetic simulation results. Our work highlights the importance of appropriately controlling the DMI in the composite free layer of the double-interface STT-MTJ.

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Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm

Cited by 29 publications

References 11 publications

Scalability of Magnetic Tunnel Junctions Patterned by a Novel Plasma Ribbon Beam Etching Process on 300 mm Wafers

Scalability of Magnetic Tunnel Junctions Patterned by a Novel Plasma Ribbon Beam Etching Process on 300 mm Wafers

Temperature Impact Analysis and Access Reliability Enhancement for 1T1MTJ STT-RAM

Magnetization Dynamics Modulated by Dzyaloshinskii-Moriya Interaction in the Double-Interface Spin-Transfer Torque Magnetic Tunnel Junction

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