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This study presents a radiofrequency (RF)-energy-harvesting integrated circuit (IC) for powering wireless sensor networks with a wireless transmitter with an industrial, scientific, and medical (ISM) of 915 MHz. The proposed IC comprises an RF-direct current (DC) rectifier, an over-voltage protection circuit, a low-power low-dropout (LDO) voltage regulator, and a charger control circuit. In the RF-DC rectifier circuit, a six-stage Dickson voltage multiplier circuit is used to improve the received RF signal to a DC voltage by using native MOS with a small threshold voltage. The over-voltage protection circuit is used to prevent a high-voltage breakdown phenomenon from the RF front-end circuit, particularly for near-field communication. A low-power LDO regulator is designed to provide stable voltage by using zero frequency compensation and a voltage-trimming feedback. Charging current is amplified N times by using a current mirror to rapidly and stably charge a battery in the proposed charger control circuit. The obtained results revealed that the maximum power conversion efficiency of the proposed RF-energy-harvesting IC was 40.56% at an input power of −6 dBm, an output voltage of 1.5 V, and a load of 30 kΩ. A chip area of the RF-energy-harvesting IC was 0.58 × 0.49 mm2, including input/output pads, and power consumption was 42 μW.

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This paper presents a dark current suppression technique for a light detector in a variable-temperature system. The light detector architecture comprises a photodiode for sensing the ambient light, a dark current diode for conducting dark current suppression, and a current subtractor that is embedded in the current amplifier with enhanced dark current cancellation. The measured dark current of the proposed light detector is lower than that of the epichlorohydrin photoresistor or cadmium sulphide photoresistor. This is advantageous in variable-temperature systems, especially for those with many infrared light-emitting diodes. Experimental results indicate that the maximum dark current of the proposed current amplifier is approximately 135 nA at 125 °C, a near zero dark current is achieved at temperatures lower than 50 °C, and dark current and temperature exhibit an exponential relation at temperatures higher than 50 °C. The dark current of the proposed light detector is lower than 9.23 nA and the linearity is approximately 1.15 μA/lux at an external resistance RSS = 10 kΩ and environmental temperatures from 25 °C to 85 °C.