Two-dimensional folded CMOS Hall device with interacting lateral magnetotransistor and magnetoresistor

Yu, Chih-Ping; Sung, Guo-Ming

doi:10.1016/j.sna.2012.04.039

Cited by 10 publications

(12 citation statements)

References 17 publications

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“…Fabrication of the MF microsensor without any post-processing was simpler than that of other MEMS MF microsensors [16][17][18]. In the MF microsensor design, the STI oxide was adopted to surround the emitter edge to counteract current moving and decrease the vertical p-n-junction effect, eliminating the current from the magnetotransistor surface and reducing leakage current.…”

Section: Discussionmentioning

confidence: 99%

“…Figure 10a demonstrates an image of the MF microsensor chip after the CMOS process. The microsensor did not require any post-processing, so its fabrication was simpler than other MEMS magnetic field microsensor [16][17][18]. Figure 10b illustrates a magnification of the MF microsensor.…”

Section: Fabrication Of Magnetic Field Sensormentioning

confidence: 99%

“…The sensitivity and performance of the sensor [16,17] manufactured by a CMOS process were higher than that manufactured by a bipolar process [19]. These microsensors [16][17][18] made by a CMOS process were 1-axis and 2-axis magnetic sensors. Thereby, a three-axis MF microsensor in this study was developed utilizing a standard CMOS process.…”

Section: Introductionmentioning

confidence: 96%

“…Leakage current existed in the sensor because there was no buried layer on the substrate. Yu et al [18] presented a 2-axis magnetic Hall device based on a bipolar transistor process. The interaction effect of the magnetotransistor and the magnetoresistor in the device was investigated.…”

Section: Introductionmentioning

confidence: 99%

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A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process

et al. 2017

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Featured Application: Three-axis magnetic field microsensors in this study can be applied to various electronic instruments, portable electronic devices, mobile phones, and industrial equipment.Abstract: This study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the microsensor characterization. The STI (shallow trench isolation) oxide in the process was used to limit the current direction and reduce leakage current. The microsensor produces a voltage difference once it senses a magnetic field. An amplifier circuitry magnifies voltage difference into a voltage output. Experiments reveals that the MF microsensor has a sensitivity of 1.45 V/T along the x-axis and a sensitivity of 1.37 V/T along the y-axis.

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Section: Discussionmentioning

confidence: 99%

Section: Fabrication Of Magnetic Field Sensormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

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A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process

et al. 2017

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“…The MMF sensor had a sensitivity of 6.5 mV/T in the x-axis and a sensitivity of 0.4 mV/T in the y-axis. A two-dimensional Hall MMF sensor with a lateral magnetotransistor and magnetoresistor, developed by Yu [ 17 ], was produced using a standard 0.35-μm CMOS process. The sensitivity of the MMF sensor was 0.385 V/(A·T) at a bias current of 100 mA.…”

Section: Introductionmentioning

confidence: 99%

Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process

Lin

Dai

2018

Micromachines

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Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to the magnetotransistor. The additional collectors enhance bias current and carrier number, so that the sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require post-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis MF and its sensitivity is 0.55 V/T in the y-axis MF.

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