We investigated the effects of rapid thermal annealing (RTA)-induced cracks on the diode performance fabricated with GaAs-AlGaAs microstructures. These effects were examined and characterized after quantum-well intermixing within an epitaxial structure capped by either SiO2 or SrF2 layers. The results show clearly that the density of surface crackes strongly depends on the atomic interdiffusion between the well and the barrier layers and on the quality of the dielectric caps as well. Moreover, surface-crack correlation with the RTA process an dielectric deposition parameters, and the cracking effects on diode performance were observed and analyzed in detail. The results demonstrate that diode characteristics can be greatly improved by good surface morphology. Most importantly, we explored an effective way of reducing the density of RTA-induced cracks for the dielectrics grown by plasma-enhanced chemical vapor deposition, which was beneficial for dielectric-cap quantum-well disordering.
The fractal market hypothesis (FMH) is one of the frontier theories of emerging finance and nonlinear science. The relationship between the FMH and the efficient market hypothesis (EMH) is easy to be confused, and its guiding role in investment practice needs to be clarified. For this reason, the theoretical origin, evolution, and cross-integration of EMH and FMH were expounded in this study using the phylogenetic method. The basic work illustrated in this study could help promote the integration and development of securities investment frontier theories using a more unified analysis framework and could guide investment practice at a higher level.
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