High Performance CMOS Light Detector with Dark Current Suppression in Variable-Temperature Systems

Lin, Wen-Sheng; Sung, Guo-Ming; Lin, Jyun-Long

doi:10.3390/s17010015

Cited by 7 publications

(4 citation statements)

References 10 publications

(11 reference statements)

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“…Therefore, the study of dark current reduction in conventional photodiodes is still an active topic. For instance, some works have been done on the photodiode design by surrounding the pixel by a p-well [21], or by introducing dark current compensation mechanisms [22], [23], [24], [25], [26], [27]. Some of these concepts of dark current compensation consist in subtracting a calibrated dark frame by means of a shielded dummy pixel, or even by controlling a negative feedback using the reset transistor.…”

Section: A Dark Current Reduction On a Conventional 3t Photodiodementioning

confidence: 99%

Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Marcelot

Goiffon

Rizzolo

et al. 2017

IEEE Trans. Electron Devices

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TCAD simulations are conducted on a 4T PPD pixel, on a conventional gated photodiode, and finally on a radiation hardened pixel. Simulations consist in demonstrating that it is possible to reduce the dark current due to interface states brought by the adjacent gate, by means of a sharing mechanism between the photodiode and the drain. The sharing mechanism is activated and controlled by polarizing the adjacent gate at a positive off voltage, and consequently the dark current is reduced and not compensated. The drawback of the dark current reduction is a reduction of the full well capacity of the photodiode, which is not a problem when the pixel saturation is limited by the readout chain. Some measurement performed on pixel arrays confirm the TCAD results.

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Section: A Dark Current Reduction On a Conventional 3t Photodiodementioning

confidence: 99%

Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Marcelot

Goiffon

Rizzolo

et al. 2017

IEEE Trans. Electron Devices

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“…There are some other noise sources introduced during the photon-to-electron stage, such as photo response nonuniformity and dark current noise, as reported in the previous literature [57], [58], [59], [64]. Over the last decade, technical advancements in CMOS sensor design and fabrication, e.g., on-sensor dark current suppression, have led to a new generation of digital single lens reflex (DSLR) cameras with lower dark current and better photo response uniformity [67], [68]. Therefore, we assume a constant photo response and absorb the effect of dark current noise N d into read noise N read , which will be presented next.…”

Section: From Photon To Electronsmentioning

confidence: 92%

Physics-based Noise Modeling for Extreme Low-light Photography

Wei¹,

Fu²,

Zheng³

et al. 2021

Preprint

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Enhancing the visibility in extreme low-light environments is a challenging task. Under nearly lightless condition, existing image denoising methods could easily break down due to significantly low SNR. In this paper, we systematically study the noise statistics in the imaging pipeline of CMOS photosensors, and formulate a comprehensive noise model that can accurately characterize the real noise structures. Our novel model considers the noise sources caused by digital camera electronics which are largely overlooked by existing methods yet have significant influence on raw measurement in the dark. It provides a way to decouple the intricate noise structure into different statistical distributions with physical interpretations. Moreover, our noise model can be used to synthesize realistic training data for learning-based low-light denoising algorithms. In this regard, although promising results have been shown recently with deep convolutional neural networks, the success heavily depends on abundant noisy-clean image pairs for training, which are tremendously difficult to obtain in practice. Generalizing their trained models to images from new devices is also problematic. Extensive experiments on multiple low-light denoising datasets -including a newly collected one in this work covering various devices -show that a deep neural network trained with our proposed noise formation model can reach surprisingly-high accuracy. The results are on par with or sometimes even outperform training with paired real data, opening a new door to real-world extreme low-light photography.

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“…2(b). This compensation mechanism assumes that the reference photodiode and light sensor would present similar dark current, subtracting them in the current domain [23].…”

Section: B Light Sensormentioning

confidence: 99%

A Multi-Sensing ISFET Array for Simultaneous In-Pixel Detection of Light, Temperature, Moisture and Ions

Hua

Cacho-Soblechero

Georgiou

2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper presents a multi-sensing pixel capable of sensing ion concentration, temperature, moisture and light from the same spatial point. The presented pixel is composed of an ISFET chemical sensor, a light sensor, a moisture sensor and a temperature sensor, all implemented in standard CMOS technology in a compact pixel. All sensing modalities are acquired simultaneously and modulated onto a single waveform using multi-frequency PWM modulation, overcoming the associated transmission overhead. Furthermore, ISFET non-idealities such as trapped charge are compensated through a global DAC, balancing the input linear OTA, while the light sensor dark current is mitigated in-pixel by subtracting its influence using a reference photodiode. The proposed pixel occupies 50x50 µm 2 , and it is integrated as part of a 4x4 multi-sensing array, along with on-chip biasing, instrumentation and digital control. To the best of our knowledge, this architecture represents the first multisensing architecture capable of extracting four features from the same spatial point simultaneously, enabling ISFET-based platforms to sense both the chemical signal and the external conditions influencing its measurement.

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High Performance CMOS Light Detector with Dark Current Suppression in Variable-Temperature Systems

Cited by 7 publications

References 10 publications

Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Dark Current Sharing and Cancellation Mechanisms in CMOS Image Sensors Analyzed by TCAD Simulations

Physics-based Noise Modeling for Extreme Low-light Photography

A Multi-Sensing ISFET Array for Simultaneous In-Pixel Detection of Light, Temperature, Moisture and Ions

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