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A FET linearization technique based on optimum gate biasing is investigated at RF. A novel bias circuit is proposed to generate the gate voltage for zero 3rd-order nonlinearity of the FET transconductance. The measured data show that a peak in IIP 3 occurs at a gate voltage slightly different from the one predicted by the dc theory. The origins of this offset are explained based on a Volterra series analysis and confirmed experimentally. The technique was used in a 0.25µm CMOS cellular-band CDMA LNA. At the optimum bias, the amplifier achieved a NF of 1.8dB, an IIP 3 of +10.5dBm, and a power gain of 14.6dB with a current consumption of only 2mA from 2.7V supply.

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A widely accepted principle of Curriculum construction states that school curricula should include experiences similar to, and in preparation for, the problems encountered in adult life. In this regard two aspects of social usage of mathematics have received reletively little attention in curriculum construction or in educational research. These aspects are: (1) the role of mental mathematics, and (2) the the role of approximate solutions to problems.

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