Surface-barrier structures based on thin high-purity GaAs epilayers with a polyethylene converter were studied as fast neutron detectors. A continuous Schottky barrier with a large area of 5 × 5 mm 2 to the high-purity GaAs epilayers was fabricated using a Pt/TiN/Au metallization system. Results of measurement of electric parameters and α-particle spectra are presented. The fast neutron spectra from the 241 Am-Be source measured by the recoil proton method for various thicknesses of the polyethylene converter and various operating biases are shown as well. The proposed detectors have shown high neutron detection efficiency of 1.30 • 10 −3 puls./neutr. and an acceptable signal-to-background ratio (at level of 50) as well as the capability to operate efficiently without any external bias.
Presenter: R.A. Mukhamedshin (muhamed@sci.lebedev.ru), rus-mukhamedshin-R-abs2-og15-posterThe modern concept of elements of a device designed to study the spectrum and composition of the primary cosmic radiation up to energies of eV and based on new technologies is considered.
Comparative analysis of GaAs semiconductor radiation detectors and silicon pixel ones with internal amplification elaborated for detection of nuclear radiation is carried out. Electrophysical and spectral characteristics are compared.Both the detector types have high sensitivity to α, β and γ radiation and can be applied in space and accelerator experiments for energy determination of elementary particles as well as in astrophysics, transmission and reflecting electron microscopy, medicine, biology and so on.
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