Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons

Kol'tsov, G.I.; Didenko, S.; Черных, А. В.; Черных, С. В.; Chubenko, A. P.; Sveshnikov, Yu. N.

doi:10.1134/s106378261208009x

Cited by 7 publications

(2 citation statements)

References 6 publications

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“…The sensors were fabricated using the technology proposed in [16]. The continuous Schottky contact with an area of 5 × 5 mm 2 to the high-purity GaAs epilayers was made using a Pt/TiN/Au metallization system and a Ni/AuGe/Au system was used to form an ohmic contact to the n ++ -…”

Section: Fabrication and Electrical Characterization Of The Vpe Gaas ...mentioning

confidence: 99%

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Fast neutron detector based on surface-barrier VPE GaAs structures

Черных

Didenko

et al. 2015

J. Inst.

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Surface-barrier structures based on thin high-purity GaAs epilayers with a polyethylene converter were studied as fast neutron detectors. A continuous Schottky barrier with a large area of 5 × 5 mm 2 to the high-purity GaAs epilayers was fabricated using a Pt/TiN/Au metallization system. Results of measurement of electric parameters and α-particle spectra are presented. The fast neutron spectra from the 241 Am-Be source measured by the recoil proton method for various thicknesses of the polyethylene converter and various operating biases are shown as well. The proposed detectors have shown high neutron detection efficiency of 1.30 • 10 −3 puls./neutr. and an acceptable signal-to-background ratio (at level of 50) as well as the capability to operate efficiently without any external bias.

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Section: Fabrication and Electrical Characterization Of The Vpe Gaas ...mentioning

confidence: 99%

“…The IV-measurements were performed using a Semiconductor Device Analyzer Agilent B1500. The CV-measurements were carried out similarly to [16]. The measurement results are shown in figure 3.…”

Section: Fabrication and Electrical Characterization Of The Vpe Gaas ...mentioning

confidence: 99%