Defect formation in subsurface Be+-and Se+-doped GaAs layers

Бублик, В. Т.; Kol'tsov, G.I.; Nemirovskii, A. V.; Yurchuk, Sergey

doi:10.1134/1.1306586

Cited by 2 publications

(2 citation statements)

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“…The superficial part of the damaged layer in GaAs is known [15] to be enriched by vacancies due to higher mobility of interstitial atoms and their sink to the surface. The vacancy-type defects are located close to the surface [16] due to spatial separation of interstitial-and vacancy-type defects.…”

Section: Analysis and Discussionmentioning

confidence: 99%

The influence ofin situphotoexcitation on a defect structure generation in Arimplanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy

Chtcherbatchev¹,

Бублик²,

Markevich³

et al. 2003

J. Phys. D: Appl. Phys.

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The influence of in situ photoexcitation on the defect structure generation in GaAs crystals implanted by Ar+ ions with energy of 200 keV and doses of 1×1013, 3×1013 and 5×1013 cm−2 was studied by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy. The in situ photoexcitation is found to provide for annihilation of Frenkel pairs that decrease a residual concentration of radiation-induced point defects. The amorphization of the damaged layer is assumed to proceed by a generation and a growth of radiation-induced point defect clusters. The vacancy- and interstitial-type clusters are spatially separated: the former are located closer to the surface than the latter ones. The in situ photoexcitation is shown to hinder the cluster growth and to stimulate diffusion of interstitials towards undamaged substrate.

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Section: Analysis and Discussionmentioning

confidence: 99%

The influence ofin situphotoexcitation on a defect structure generation in Arimplanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy

Chtcherbatchev¹,

Бублик²,

Markevich³

et al. 2003

J. Phys. D: Appl. Phys.

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“…On the other hand, there is a large amount of exper imental data obtained in our earlier studies [1,16] and in a number of studies by other authors [17][18][19][20][21]. These experimental studies of grown in microdefects dem onstrated that the precipitation of impurities occurs immediately during cooling of the crystal after the growth.…”

Section: Recombination-diffusion Modelmentioning

confidence: 88%

On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory

Talanin

2014

Phys. Solid State

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The adequacy of the model of high temperature precipitation in dislocation free silicon single crystals to the classical theory of nucleation and growth of second phase particles in solids has been consid ered. It has been shown that the introduction and consideration of thermal conditions of crystal growth in the initial equations of the classical nucleation theory make it possible to explain the precipitation processes occurring in the high temperature range and thus extend the theoretical basis of the application of the clas sical nucleation theory. According to the model of high temperature precipitation, the smallest critical radius of oxygen and carbon precipitates is observed in the vicinity of the crystallization front. Cooling of the crystal is accompanied by the growth and coalescence of precipitates. During heat treatments, the nucleation of pre cipitates starts at low temperatures, whereas the growth and coalescence of precipitates occur with an increase in the temperature. It has been assumed that the high temperature precipitation of impurities can determine the overall kinetics of defect formation in other dislocation free single crystals of semiconductors and metals.

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Defect formation in subsurface Be+-and Se+-doped GaAs layers

Cited by 2 publications

References 2 publications

The influence ofin situphotoexcitation on a defect structure generation in Arimplanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy

The influence ofin situphotoexcitation on a defect structure generation in Arimplanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy

On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory

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Defect formation in subsurface Be+-and Se+-doped GaAs layers

Cited by 2 publications

References 2 publications

The influence ofin situphotoexcitation on a defect structure generation in Ar implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy

The influence ofin situphotoexcitation on a defect structure generation in Ar implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy

On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory

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The influence ofin situphotoexcitation on a defect structure generation in Arimplanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy

The influence ofin situphotoexcitation on a defect structure generation in Arimplanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy