The influence ofin situphotoexcitation on a defect structure generation in Ar implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy

Abstract

The influence of in situ photoexcitation on the defect structure generation in GaAs crystals implanted by Ar+ ions with energy of 200 keV and doses of 1×1013, 3×1013 and 5×1013 cm−2 was studied by high-resolution x-ray diffraction and Rutherford backscattering spectroscopy. The in situ photoexcitation is found to provide for annihilation of Frenkel pairs that decrease a residual concentration of radiation-induced point defects. The amorphization of the damaged layer is assumed to proceed by a generation and a growth of radiation-induced point defect clusters. The vacancy- and interstitial-type clusters are spatially separated: the former are located closer to the surface than the latter ones. The in situ photoexcitation is shown to hinder the cluster growth and to stimulate diffusion of interstitials towards undamaged substrate.

The effect ofin situphotoexcitation on the generation of damaged structures during ion implantation into Si wafers

“…The superficial part of the damaged layer has negative strain, which allows for the conclusion that this area is enriched by vacancy-type defects. A similar effect was observed in GaAs wafers implanted by Ar + ions [4]. Two maxima are clearly seen in the L H (z) profile, which also testifies to the depth separation of vacancy-and interstitialtype defects.…”

“…Thus, in situ photoexcitation is expected to affect the structure of the layer damaged by ion irradiation. This effect was observed for GaAs wafers implanted by Ar + ions [4] using structure sensitive methods (high-resolution x-ray diffraction and Rutherford backscattering spectroscopy). This work attempts to observe this effect using high-resolution x-ray diffraction in silicon samples implanted under various conditions.…”

Microstructural modifications induced in Si+-implanted yttria-stabilised zirconia: a combined RBS-C, XRD and Raman investigation

“…5) was determined roughly from the position of the peak. Using this approach, the measured curves to simulations were fitted using the strategy described below (see also 56 ). In the first step, we assumed that the implanted region is homogeneous and we determine its isotropic strain ε , static DW factor D and thickness T .…”

In-depth structural analysis of swift heavy ion irradiation in KY(WO4)2 for the fabrication of planar optical waveguides

“…Simulation of the curves of diffraction reflection was performed in the framework of the dynamical theory of X ray diffraction, using formalism suggested by Wie et al [34]. To reconstruct the profiles, we used an auto-fitting procedure similar to the one used by Chtcherbatchev et al [35]. HRXRD measurements were performed on the samples irradiated with 1•10 14 ions/cm 2 and 4•10 14 ions/cm 2 carbon ions before and after annealing at 350°C for 30 minutes.…”