SILICON MONOCRYSTALS The mathematical model and computer program for primary growing microdefects formation process in a dislocation-free silicon monocrystal based on a dissociation diffusion process are represented in this article.

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Using selective etching technique and transmission electron microscopy C‐ and D‐types micro‐pefects in silicon single crystals grown in the<111> direction by zone floating technique in vacuum at growth rates ≈ 6 mm/min are investigated. On the basis of diffraction contrast analysis of electron microscopic images it is established that the above mentioned microdefects are of interstitial type. Possible formation mechanisms and the structure of the microdefects detected are discussed.