Kinetics of high-temperature precipitation in dislocation-free silicon single crystals

Introductory Chapter: Description of the Real Monocrystalline Structure on the Basis of the Vlasov Model for Solids

“…The formation of new phase nuclei takes place near the crystallization front of the crystal [2]. In article [2], the model of high-temperature precipitation of impurities is described.…”

“…In article [2], the model of high-temperature precipitation of impurities is described. At the second stage of the precipitation process, clusters grow without a change in their number.…”

“…In 2010, we created a model of high-temperature precipitation of impurities [2]. In this model, the inclusion of thermal growth conditions of silicon single crystals in the form of the dependence TðtÞ (where T is temperature, t is time) allows us to theoretically describe the conditions for nucleation, growth, and coalescence of the precipitates in the range from the crystallization temperature to room temperature.…”

Algorithm for Calculating the Initial Defect Structure of Semiconductor Silicon

“…In paper [11] was considered the modern approach based on solving systems of coupled discrete differential equations of quasi-chemical reactions for the description of the initial stages of the formation of nuclei of new phases and a similar system of Fokker-Planck continuity differential equations. The nucleation and evolution of a complex system of grownin microdefects (which consists of oxygen and carbon precipitates) during cooling of the crystal are described by the systems of coupled differential equations for each type of defect: …”

“…The algorithm used for solving the problem of simulation of the simultaneous growth and dissolution of the oxygen and carbon precipitates due to the interaction of point defects during cooling of the crystal from the crystallization temperature is based on the monotonic explicit difference scheme of the first order accuracy as applied to the FokkerPlanck equations (10) [11].…”