Comparative Characteristics of GaAs Detectors and Silicon Pixel Detectors with Internal Amplification

Abstract

Comparative analysis of GaAs semiconductor radiation detectors and silicon pixel ones with internal amplification elaborated for detection of nuclear radiation is carried out. Electrophysical and spectral characteristics are compared.Both the detector types have high sensitivity to α, β and γ radiation and can be applied in space and accelerator experiments for energy determination of elementary particles as well as in astrophysics, transmission and reflecting electron microscopy, medicine, biology and so on.