The a-GaN films were successfully grown on the r-sapphire substrate by MOCVD method. The structure of V-defects was investigated by AFM and SEM. The dependence of V-defects density on growth temperature of a-GaN film at a constant hydrogen flow through a TEG source was studied. The influence of V/III ratio on V-defects structure was investigated. Methods of V-defects density minimisation were purposed.
One of the valuable problems of modern science and technology is to create a low-power (less than 1 mW), long-life (10-100 years) miniature sources of electric power based on the conversion of radioactive isotopes of energy into electricity. Such batteries can be used directly, for example, in cardiology, microelectromechanical systems (MEMS), in military equipment and power sharing systems for many applications. Among isotopes to create energy sources particular interest is nickel Ni63, as it is safe for human health and thus in the development of electric batteries based on it devoted a lot of work. This article discusses the main types of structures betavoltaic battery (BVB) with the prospects for industrial application using - isotope of nickel Ni63. It is shown that the efficiency of beta radiation conversion of into electricity and the dimensions of the existing batteries are far from the theoretically possible. It is shown that the prospects for improving the effective efficiency are planar multijunction betavoltaic batteries.
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