Structure of V-defects in a-GaN films grown on r-sapphire substrate

Савчук, A. Й.; Akhmerov, Yu; Chelny, Alexander A.; Abdullaev, O. R.; Rabinovich, Oleg; Mezhenny, Michail; Zharkova, Alina; Aluyev, A.; Zakusov, M; Kourova, N.; Murashev, V. N.; Didenko, S.

doi:10.1088/1742-6596/1410/1/012022

Cited by 4 publications

(3 citation statements)

References 4 publications

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“…Small pits were then formed on the TD core. When the growth temperature of InGaN is lowered, the growth rate of the (10)(11) plane is lower than that of the (0001) plane, causing the formation of V-defects along the six sloping (10-11) sidewalls. On one hand, increasing the temperature enhances the surface Ga and In atomic mobility, reducing the number of pit cores.…”

Section: Resultsmentioning

confidence: 99%

“…We further tested the surface topography of the three samples using AFM over a larger area, and the results are shown in figure 5. It indicates that surface morphology deteriorates and the defect densities increases when the growth temperature decreases from 810 °C to 785 °C, which is attributed to the different growth rate between (10)(11) and (0001). It is reported that the different growth rate on (10-11) will decrease when growth temperature decreases, and the surface migration of Ga and In atoms will also decrease Therefore, increasing the temperature can effectively reduce the defect density of V-defects to a certain extent.…”

Section: Resultsmentioning

confidence: 99%

“…At the same time, during the growth of InGaN, due to the lattice mismatch between the sapphire substrate and the GaN template layer, a large number of dislocations are generated at the interface between the substrate and GaN and extend to the InGaN layer, resulting in a high defect density of InGaN [9]. In addition, studies have also shown that the growth of InGaN causes the rate of the (10)(11) plane to be different from that of the (0001) plane, resulting in the formation of V-defects [10,11]. Because the content of In affects the analysis of the material quality, we ensured that the content of In was approximately the same in the experiment.…”

Section: Introductionmentioning

confidence: 99%

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Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials

Wang

et al. 2022

Mater. Res. Express

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We studied the influence of temperature and pressure on the surface morphology and V-defects of the InGaN films. It was found that an appropriate increase in the growth temperature enhanced the mobility of Ga and In atoms, smoothened the surface of the InGaN thin film samples, and improved the growth quality. Simultaneously, increasing the temperature appropriately reduced the surface roughness of the sample and the defect density of the V-defects. It is also found that under the same temperature conditions, a lower pressure weakens the incorporation barrier of atoms, enhances the incorporation efficiency of In atoms, and improves the growth quality of InGaN.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials

Wang

et al. 2022

Mater. Res. Express

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In0.01Ga0.99As: (Zn / Si) layers growth with special parameters for solar cells

Lebedev

Smirnov

Naumova

et al. 2021

AIP Conference Proceedings

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Macrodefects investigation in a-GaN films

et al. 2022

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Investigation of the effect of crystal defects on nonpolar a-GaN films grown by metalorganic chemical vapor deposition on r-sapphire substrates is presented. Samples were grown at different temperatures and the same V/III ratio. High-temperature nucleation in combination with low-temperature GaN buffer layer growth was used to achieve a smooth morphology and “mirror” surface. The macrostructures of the defects were investigated using a scanning electron microscope. Defect concentration via dislocation type correlation was analyzed by diffractometry investigation. Structural quality was investigated via x-ray diffraction. The correlation between the densities of mixed threading dislocations and V-defects was determined. It was detected that the origin of V-defects on the a-plane and c-plane was the same despite having completely different geometries and structures. We also investigated the dependence of V-defect density on a-GaN film growth temperature at a constant hydrogen flow through a triethylgallium source, and we also investigated how the V/III ratio influenced the V-defect structure. Optimum growth parameters for defect concentration reduction were determined.

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Structure of V-defects in a-GaN films grown on r-sapphire substrate

Cited by 4 publications

References 4 publications

Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials

Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials

In0.01Ga0.99As: (Zn / Si) layers growth with special parameters for solar cells

Macrodefects investigation in a-GaN films

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