Current investigation is focused on InxGa1-xP and InxAl1-xP epitaxial layers growth. Multicomponent nanoheterostructures are the main materials for a contemporary triple-cascade solar cell, and for perspective photovoltaic devices. The optimal InxGa1-xP and InxAl1-xP growth process characteristics are determined. InxGa1-xP epitaxial layers (with In & Ga varied on Ge), and InxAl1-xP layers (with Al & In varied on Ge and GaAs) are investigated. During investigation X-ray diffractometry was used. Based on results of X-ray diffractometry the lattice parameter and In / Ga / Al ratio in the structure were detected. Solid phase versus the gas phase composition correlation was found based on the lattice parameters. It is determined that diffraction X-ray peaks broadening can be used as a parameter for the heterostructure perfection analyze. For the InxGa1-xP solid solution (X = 45–53 %) and for InxAl1-xP solid solution (X = 46-51 %) a high quality of the single-crystal structure and a slight diffraction X-ray peaks broadening are detected.
The paper presents the results of studying the electrophysical characteristics (conductivity and concentration of the main charge carriers) of In0.01Ga0.99As layers of the middle cascade and other structural parts of the space-based InGaP/InGaAs/Ge solar cell depending on the doping type and level specified during epitaxial growth from the gas phase by varying the supply parameters of the sources of Si and Zn impurities. The studies were performed using X-ray diffractometry, non-contact conductivity measurement, electrochemical C–V profilometry, van der Pau method (Hall effect). A linear dependence of the main charge carrier concentration in the layer on the fraction of the doping precursor in the gas mixture was confirmed. The proportionality coefficients were determined for silicon and its disilane precursor, for zinc and its dimethylzinc precursor. The results of the dopant distribution uniformity study are shown and discussed as well as the assumptions about the effects of the temperature field gradient and the stress state in the layer and substrate.
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