Abstract:The paper presents the results of studying the electrophysical characteristics (conductivity and concentration of the main charge carriers) of In0.01Ga0.99As layers of the middle cascade and other structural parts of the space-based InGaP/InGaAs/Ge solar cell depending on the doping type and level specified during epitaxial growth from the gas phase by varying the supply parameters of the sources of Si and Zn impurities. The studies were performed using X-ray diffractometry, non-contact conductivity measuremen… Show more
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