The Review of Modern Solar Cells for Space Application Based  on Aiiibv Materials

Slyshchenko, E.V.; Naumova, A.A.; Lebedev, Alexander A.; Genali, M.A.; Vagapova, N. T.; Zhalnin, B.V.; “Kvant”, Jsc “Research-production enterprise

doi:10.31772/2587-6066-2018-19-2-308-324

Cited by 14 publications

(6 citation statements)

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“…The choice of an equivalent scheme and a set of assumptions for SC description is carried out depending on the problem being solved. A rather complete overview of the problems to be solved and the cell models suitable for their solution is presented in the papers [1][2][3][4][5][6][7][8][9]. To build a model (1) during the study of SC operation under external effects that can lead to the occurrence of damage of various types, the equivalent scheme shown in Fig.…”

Section: Simulation Of Sb Individual Elements Operationmentioning

confidence: 99%

“…During spacecrafts operation two types of processes of degradation of individual elements of the SB can be observed: a smooth change in the properties of the SC as damages accumulate as a result of the unfavorable factors (UF) action or a stepwise change in the SC properties. The methodological apparatus that allows simulating the process of SB operation with a smooth change in the SC properties is sufficiently developed [1][2][3][4][5][6][7][8][9], however, there are no models that describe the process of SB operation in the case of stepwise change in the SC properties. The list of SC characteristics, causes and examples of their stepwise changes are presented in the paper [10].…”

Section: Introductionmentioning

confidence: 99%

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Statistical evaluation of the characteristics of damaged solar panels of spacecraft

А.А.

A.V.

2023

Technical Physics

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The change in the characteristics of a solar battery as a result of a random abrupt change in the properties of individual solar cells, which occurred as a result of a single or systematic impact of adverse factors in near-Earth outer space, is considered. The choice of the calculation scheme for constructing a model of a single solar cell is substantiated. For this situation, analytical mathematical models of typical connections of solar cells have been developed. Using the developed models, the current-voltage and volt-watt characteristics of the solar battery are analyzed in the case of an abrupt decrease in the photocurrent of solar cells with different probabilities. A statistical analysis of the characteristics of damaged solar cells was carried out using simplified logical-analytical models with the introduced circuit loss coefficient. Estimates of the values of the coefficient of circuit losses for typical schemes for connecting solar cells are given. Keywords: solar cell, voltage characteristic, functioning model, damaged solar battery.

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Section: Simulation Of Sb Individual Elements Operationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Statistical evaluation of the characteristics of damaged solar panels of spacecraft

А.А.

A.V.

2023

Technical Physics

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“…Three-junction PVCs based on a GaInP/Ga(In)As/Ge heterostructure, which includes more than 20 layers with different physical and chemical properties, are the most widespread [3][4][5][6]. The post-growth treatment of these heterostructures in PVC fabrication is a fairly labor-consuming process.…”

Section: Introductionmentioning

confidence: 99%

Plasmachemical etching in postgrowth technology of photovoltaic converters

et al. 2022

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Investigation of the heterostructure plasmachemical etching technology for fabricating multi-junction photovoltaic converters has been carried out. The dividing mesa-structure forming stage at different etching regimes and subsequent disturbed layer removing by liquid chemical treatment has been reviewed. The influence of mesa etching methods on cells photovoltaic characteristics has been investigated. Developed was the technology of photovoltaic converters fabrication with low current leakage values less than 10-9 A at voltage less then 1 V with high resistance to degradation. Keywords: photovoltaic converter, heterostructure, plasmachemical etching, mesa-structure.

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“…Введение. Современный уровень развития солнечных элементов (СЭ) во многом обусловлен совершенными технологиями эпитаксиального роста из газовой фазы (ГФЭ) [1]. Действительно, рекордную эффективность преобразования солнечного излучения показывают СЭ на основе соединений АIIIBV, сложная многослойная гетероструктура которых создается таким методом.…”

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“…Действительно, рекордную эффективность преобразования солнечного излучения показывают СЭ на основе соединений АIIIBV, сложная многослойная гетероструктура которых создается таким методом. Это утверждение относится прежде всего к каскадным СЭ с КПД ≈ 30 %, изготовляемым серийно для создания из них фотогенерирующей части солнечных батарей современных космических аппаратов [1]. Тем не менее перспективные разработки по 4-, 5-, 6-каскадным СЭ космического назначения (для преобразования внеатмосферного излученияспектра АМ0 с КПД ≈ 36 % [2][3][4]) ведущие мировые компанииразработчики выполняют с применением метода ГФЭ или с использованием комбинации методов ГФЭ и молекулярно-лучевой эпитаксии [5].…”

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Obtaining the specified electrophysical parameters of In0,01Ga0,99As:(Zn/Si) layers of solar cells in the epitaxial process from the gas phase

Lebedev

Smirnov

Naumova

et al. 2020

EJSI

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The paper presents the results of studying the electrophysical characteristics (conductivity and concentration of the main charge carriers) of In0.01Ga0.99As layers of the middle cascade and other structural parts of the space-based InGaP/InGaAs/Ge solar cell depending on the doping type and level specified during epitaxial growth from the gas phase by varying the supply parameters of the sources of Si and Zn impurities. The studies were performed using X-ray diffractometry, non-contact conductivity measurement, electrochemical C–V profilometry, van der Pau method (Hall effect). A linear dependence of the main charge carrier concentration in the layer on the fraction of the doping precursor in the gas mixture was confirmed. The proportionality coefficients were determined for silicon and its disilane precursor, for zinc and its dimethylzinc precursor. The results of the dopant distribution uniformity study are shown and discussed as well as the assumptions about the effects of the temperature field gradient and the stress state in the layer and substrate.

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The Review of Modern Solar Cells for Space Application Based on Aiiibv Materials

Cited by 14 publications

References 0 publications

Statistical evaluation of the characteristics of damaged solar panels of spacecraft

Statistical evaluation of the characteristics of damaged solar panels of spacecraft

Plasmachemical etching in postgrowth technology of photovoltaic converters

Obtaining the specified electrophysical parameters of In0,01Ga0,99As:(Zn/Si) layers of solar cells in the epitaxial process from the gas phase

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