The effect of internal strain in the zincblende structure was examined on a GaAs single crystal by X-ray intensity measurements under a uniaxial stress along the [1T0] direction. It was found that the stress changes the structure factor of the weak reflexion (006), giving the value ~ = 0.764 + 0.009 for the bondbending constant.
SrBi 2 Ta 2 O 9 ) 1−x (Bi 3 TiNbO 9 ) x ((SBT) 1−x (BTN) x ) bulk ceramic was fabricated by the conventional solid state reaction. The samples were characterized in terms of the structural, dielectric, ac conductivity, and ferroelectric properties. The solid solution samples exhibited improved electrical properties compared to end members SBT and BTN. The Curie temperature of the solid solution was found to increase linearly with increasing BTN content. The solid solution samples exhibited lower conductivity than the end members SBT and BTN. The solid solution showed higher remanent polarization, but higher coercive field than SBT. The present results indicate that the (SBT) 1−x (BTN) x solid solution may be a useful SBT-based material for FRAM applications.
The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of photoconductive gain as experimentally measurable through monitoring the temporal evolution of conductivity current photoenhancement under continuous epilayer illumination-exposure. A modelling taking into account the built-in potential barrier of the interface of the epitaxial layer/substrate device (ESD) as well as its modification by the photovoltage induced within the illuminated ESD diode leads to predicting the technologically exploitable possibility of a notably slow photonic dose-evolution (exposure time-development) of the optonanoelectronics ESD photoconductive gain
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