Internal strain of GaAs. II. Transverse case

Abstract

The effect of internal strain in the zincblende structure was examined on a GaAs single crystal by X-ray intensity measurements under a uniaxial stress along the [1T0] direction. It was found that the stress changes the structure factor of the weak reflexion (006), giving the value ~ = 0.764 + 0.009 for the bondbending constant.

Tetragonal and trigonal deformations in zinc-blende semiconductors: A tight-binding point of view

“…However, for GaAs, the most-cited experimental result ζ = 0.76 [12] is still controversial [7,9,13,14] and differs significantly from the theoretical value ζ = 0.48 obtained by Nielsen and…”

Ab initiolattice dynamics of BN and AlN: Covalent versus ionic forces

“…In systems with weaker bound electrons and with partially ionic/covalent bonding, where lattice distortions are accompanied with relatively large charge density redistributions, larger values are observed for , e.g., ϭ0.76 for GaAs. 46 In order to corroborate the obtained values of by an independent method we compute from the derivative of the internal forces acting on the atoms in the unit cell with respect to the applied uniform stress along the ͓111͔ direction. 47 Following this procedure, we derived ϭ0.068 for 3C BN and ϭ0.567 for 3C AlN.…”

Dopant-defect interactions in Ge: Density functional theory calculations

“…As the dimension of devices is further scaled surfaces and interfaces will have an increasingly important role. In that respect strain or the introduction of SnGe or SiGeSn alloys is bound to be important [62][63][64], whereas the approaches discussed are transferable to other semiconductor systems [65][66][67][68][69][70][71].…”