Room temperature persistent photoconductivity in GaP:S

Zardas, G. E.; Theodorou, D. E.; Euthymiou, P. C.; Symeonides, Ch.I.; Riesz, Ferenc; Szentpall, B.

doi:10.1016/s0038-1098(97)10065-5

Cited by 11 publications

(8 citation statements)

References 9 publications

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“…Photoconductivity can be persistent and decay in III–V and II–V materials extremely slowly, starting from several hours and persisting for days and weeks. Many materials exhibit persistent photoconductivity (PPC) at temperatures below 150 K but there are a number of materials that show it at room temperature, as well as at temperatures as high as 400 K . A number of models have been published to understand PPC, and many of them start by characterizing the role of defects with respect to the magnitude of the recorded PPC .…”

Section: Conductivity and Photoconductivitymentioning

confidence: 99%

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

et al. 2018

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Classical concepts associated with the electronic properties of inorganic materials in the context of conditions used in biointerface studies are summarized. Electronic properties provide unique ways for stimulating a variety of biological systems; however, here the major focus is on mammallian cells. An additional focus is placed on bulk and electronic properties prior to chemical functionalization of inorganic materials. Representative studies, challenges, and opportunities toward utilization of charge, conductivity, photoconductivity, polarity, and piezoelectricity‐dependent mamallian cell interfaces are highlighted.

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Section: Conductivity and Photoconductivitymentioning

confidence: 99%

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

et al. 2018

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“…From the data of Fig. 1, p ε and Q-factor from Table I for the 18.949 GHz N1-13 mode in GaAs, the semiconductor conductivity was calculated using (6). The results are shown in Fig.…”

Section: Photoconductivitymentioning

confidence: 99%

“…Persistent photoconductivity is extensively described in the literature [1,2,3,4,5,6] as resulting from hole creation in a semiconductor where the energy gap is smaller than the energy of the illuminating light, thus freeing many new conduction electrons. Once the light source is extinguished recombination occurs.…”

Section: Introductionmentioning

confidence: 99%

“…[2,3,4] This model has been extended with local inhomogeneities from defect clusters. [6] The second model has atomic scale microscopic barriers at centers with large lattice relaxation. AlGaAs/GaAs structures are described [1] with centers where the empty defect level lies above the minimum of the conduction band while the occupied level lies within the band gap.…”

Section: Introductionmentioning

confidence: 99%

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Observation of persistent photoconductivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures using the whispering gallery mode method

Hartnett

Mouneyrac

Floch

et al. 2008

Journal of Applied Physics

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Whispering Gallery modes in bulk cylindrical Gallium Arsenide and Gallium Phosphide samples have been examined both in darkness and under white light at cryogenics temperatures ≤ 50 K.In both cases persistent photoconductivity was observed after initially exposing semiconductors to white light from a halogen lamp. Photoconductance decay time constants for GaP and GaAs were determined to be 0.900 ± 0.081 ns and 1.098 ± 0.063 ns, respectively, using this method.

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“…Both models are complementary and closely related to each other, allowing qualitative interpretation of the observed experimental results on LR and RC. The data presented in papers [2][3][4][5][6] devoted to the nonequilibrium photoconductivity of irra-diated or S-doped A III B V semiconductor compounds, can be used to reveal the mechanisms resulted in LR and the states with RC.…”

Section: Introductionmentioning

confidence: 99%

Long-Time Relaxation and Residual Conductivity in GaP Irradiated by High-Energy Electrons

Yeritsyan¹,

Grigoryan²,

Harutyunyan³

et al. 2014

JMP

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This paper presents the results of a study of long-time relaxation (LR) and residual conductivity in n-type gallium phosphide (GaP) crystals irradiated by 50 MeV electrons. A manifold increase in photosensitivity and quenching of residual conductivity was found as a result of irradiation. It is shown that LR in GaP is due to disordered regions (generated by electron irradiation) which have conductivity close to self one. The Fermi level in the disordered regions is determined by which is located deep in the forbidden band (Е е − 1.0 eV). LR effect is mainly explained by a spatial separation of electrons and holes, recombination of which is prevented by potential barriers. The observed increase in conductivity is associated with the increase in the concentration of minority carriers as well as with increase of the Hall mobility at the sample illumination.

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Room temperature persistent photoconductivity in GaP:S

Cited by 11 publications

References 9 publications

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

Bulk and Surface Electronic Properties of Inorganic Materials: Tools to Guide Cellular Behavior

Observation of persistent photoconductivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures using the whispering gallery mode method

Long-Time Relaxation and Residual Conductivity in GaP Irradiated by High-Energy Electrons

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