Nelumbo nucifera Gaertn (Nelumbonaceae) leaf was used as food or beverage in Taiwan. Recently, the leaf extract was also found to possess antioxidative ability. Base on the close relationship between antioxidation and atherosclerosis, we investigated the inhibitory activity of the water extract (Nelumbo nucifera leaf extract [NLE]) on hyperlipidemia and atherosclerosis. In rabbits fed with high‐cholesterol diet (HCD) plus 0.5% or 1.0% of NLE, the inhibitory level of triglyceride was 30% and 46.6%, and low‐density lipoprotein cholesterol (LDL‐C) was 45.4 and 45.9% compared with the HCD‐fed rabbits. NLE significantly reduced severe atherosclerosis, foam cell formation and smooth muscle cell proliferation and migration in the aorta. In the thiobarituric acid‐reacting substances assay, the concentration of NLE higher than 0.05 mg/mL, the inhibitory percentage was about 80%. In the relative electrophoretic mobility assay, NLE inhibited oxidative LDL up to 60%. These results suggest that NLE lowers LDL oxidation and serum lipids, and has cardiovascular protective ability.
PRACTICAL APPLICATIONS
The water extract of Nelumbo nucifera Gaertn (Nelumbonaceae) leaf can significantly inhibit oxidative low‐density lipoprotein in vitro and reduce plasma lipid, atherosclerosis, foam cell formation, and smooth muscle cell proliferation and migration in vivo. These findings point out that the water extract of Nelumbo nucifera Gaertn (Nelumbonaceae) leaf can be applied for preventing cardiovascular diseases.
Diffusion of boron from ion implanted polycrystalline silicon source through 12.5 nm oxides was measured as a function of annealing ambience and doping concentrations of phosphorus or arsenic in the polycrystalline silicon. For comparison, boron ion implanted into 500 nm oxides was also investigated. In both cases, annealing in forming gas (90% N2, 10% H2) increases the diffusion rate of boron over that in nitrogen and the rate increase is the result of a large increase in the pre-exponential term. Diffusion of ion implanted boron in oxides is much slower than that from an ion implanted polycrystalline silicon source. The lowering of the rate is the result of the five orders of magnitude decrease in the pre-exponential term, even though concurrently there is also a decrease in the activation energy. Co-doping of polycrystalline silicon with either phosphorus or arsenic lowers the pre-exponential term by approximately 10%. Therefore, we conclude that boron diffusion through oxides is entropy dominated.
Abstract-This paper demonstrates the one-dimensional computational results of the propagation of Gaussian electromagnetic pulse through dielectric slabs of finite thickness with variation in permittivity. The numerical approach used is the characteristic-based method solving the time-domain Maxwell curl equations involved with nonuniform permittivity. In the numerical model, all dielectric slabs are assumed to be isotropic, lossless, and linear. The permittivity of dielectric slab may increase or decrease linearly or sinusoidally. The numerical permittivity is finely discretized such that the variation between two adjacent grids is so small that the non-uniform permittivity is assumed to be piecewise continuous and consequently can be modeled as an individual block. The numerical results of various electric fields, both in the time-and frequency-domain, are presented and compared based on the dielectric slab of constant permittivity for close investigating the effects of the non-uniform permittivity distribution on the electromagnetic fields. It is also shown that under certain arrangement of Gaussian electromagnetic pulse and dielectric slab thickness the pattern of field propagation, reflection and transmission, can be reproduced in different time scales and frequency ranges.
Titanium interaction with phosphorus-doped polycrystalline silicon gate electrodes was investigated by cross-sectional transmission electron microscopy and correlated with sheet resistance measurements. Phosphorus concentration above 1×1016 ion/cm2 in the polycrystalline silicon leads to decreased TiSi2 formation, discontinuous metal silicide layer, and increased sheet resistance. A possible cause could be the formation of titanium phosphide at high phosphorus concentration in the polycrystalline silicon, competing with the total titanium available for silicide formation.
Articles you may be interested inGaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxideThe influence of titanium nanoparticles embedded in the surface of silicon substrates by ultrasonic agitation on diamond chemical vapor deposition was studied. The deposited diamond particle density ͑DPD͒ was found to be substantially enhanced by using a mixed slurry ͑Di/Ti͒ compared to abrasion with a diamond slurry solely. It was also determined that, under the ultrasonic agitation conditions used in this work, the addition of titanium particles to the abrasive suspension does not affect the quantity of embedded diamond growth centers, nor does it alter their chemical character. Rather, the Ti particle additives are active during the initial stages of deposition. Ion implantation experiments show that diamond homoepitaxially grows on diamond residues, and that Ti residues do not serve as nucleation centers. The annihilation of diamond growth centers prior to stable substrate formation is attributed to hydrogen etching, while the effect of thermal annealing is negligible. These experiments show that Ti residues do not prevent the etching of diamond debris. We therefore conclude that the increase in DPD is related to an enhancement in diamond growth that is induced by the Ti additives. We suggest that the enhanced growth is the result of Ti catalyzed surface reactions.
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