A low cost n-SiCN/p-PS/p-Si heterojunction for high temperature ultraviolet detecting applications

Chou, Tse-Heng; Kuo, Ta-Wei; Lin, Chun‐Yu; Lai, Fu-Shun

doi:10.1016/j.sna.2018.06.050

Cited by 6 publications

(2 citation statements)

References 33 publications

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“…Silicon carbonitride films are attractive coatings for advanced technology due to their favorable physical characteristics, including optical properties. Due to their tunable refractive index and bandgap, SiCN coatings are perspective materials for solar cell technology, UV detectors operated at high temperatures, integrated photonics and solid state lighting [1][2][3][4]. Plasma enhanced chemical vapor deposition (PECVD) is one of the most common deposition techniques for SiC:H (SiCN:H) films formation that allows for producing high-quality films with good adhesion to the substrate, and also lowering the temperature required for precursor activation and film formation.…”

Section: Introductionmentioning

confidence: 99%

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

et al. 2023

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PECVD SiC:H (SiCN:H) films were produced using tetramethylsilane (TMS) as a precursor in a mixture with inert helium or ammonia as a source of nitrogen. Mild plasma conditions were chosen in order to prevent the complete decomposition of the precursor molecules and promote the incorporation of the fragments of precursor into the film structure. The effect of deposition temperature and composition of gas mixture on the chemical bonding structure, elemental composition, deposition rate, and optical properties (transmittance, optical bandgap, and refractive index) of films have been examined. Use of the chosen deposition conditions allowed them to reach a relatively high deposition rate (up to 33 nm/min), compared with films produced in high plasma power conditions. Use of ammonia as an additional gas led to effective incorporation of N atoms in the films. The composition of the films moved from SiC:H to SiN:H with increasing of ammonia content to P(NH3)/P(TMS) = 1. The refractive index and optical bandgap of the films varied in the range of 1.55–2.08 and 3.0–5.2 eV, correspondingly, depending on the film composition and chemical bonding structure. The effect of treatment of SiCN films deposited at 400 °C by plasma of He, O2 or NH3 were studied by X-ray photoelectron spectroscopy, atomic force microscopy, and contact angle measurements. It was shown that plasma treatment significantly changes the surface characteristics. The water contact angle of the film was changed from 71 to 37° after exposure in the plasma conditions.

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Section: Introductionmentioning

confidence: 99%

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

et al. 2023

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“…Interest in silicon carbonitride thin films and coatings has accelerated over the last forty years due to their important chemical, electrical, optical and mechanical properties and their potential to enable new devices [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

1,4-Bis(trimethylsilyl)piperazine—Thermal Properties and Application as CVD Precursor

et al. 2023

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We report an investigation into 1,4-Bis-N,N-(trimethylsilyl)piperazine (BTMSP) as a novel precursor for the synthesis of silicon carbonitride films by chemical vapor deposition (CVD). The thermal stability, temperature dependence of vapor pressure and thermodynamic constants of the evaporation process of BTMSP were determined by static tensimetry with a glass membrane zero manometer. The transformation of the compound in low-power (25 W) plasma conditions was investigated by optical emission spectroscopy. It was shown that BTMSP undergoes destruction, accompanied by H and CH elimination and CN formation. SiCN(H) films were deposited in a hot-wall plasma-enhanced CVD reactor. The optical properties of the films were studied by spectral ellipsometry (refractive index: 1.5–2.2; absorption coefficient: 0–0.12) and UV–Vis spectroscopy (transmittance: up to 95%; optical bandgap: 1.6–4.9 eV). Information on the aging behavior of the films is also provided. The transformation of the films occurred through water adsorption and the formation of Si–O bonds with the degradation of Si–H, N–H and Si–CHx–Si bonds.

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Multilayer PECVD Si–C–N Films

Kozak

Иващенко

Porada

et al. 2020

Springer Proceedings in Physics

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A low cost n-SiCN/p-PS/p-Si heterojunction for high temperature ultraviolet detecting applications

Cited by 6 publications

References 33 publications

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

1,4-Bis(trimethylsilyl)piperazine—Thermal Properties and Application as CVD Precursor

Multilayer PECVD Si–C–N Films

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