The photovoltaics (PV) is a method of direct conversion of solar energy to electricity using semiconductor solar cells. In terms of globally installed capacity, PV remains third the most important renewable energy source after hydro and wind powers. 31.1 GW of PV systems were installed around the world in 2012 and up from 30.4 GW in 2011.There is a rapid growth of PV cell production and it is expected to increase further. However PV technology have to cost effective in comparison to hydro or wind powers and other sources of renewable energy. It has to reach the "grid parity" i.e. less or equal price for generated electricity power. More than 85% of solar cells (SC) are made from solar grade silicon (SoGSi). SoGSi is produced by purification of metallurgy grade silicon (MGSi) which is produced by carbon recovering silicon from quartz. Also Quartz is an initial and essential material for obtaining SoGSi and SC. Rich resource of quartz Sarykol located at southern part of Kazakhstan where the main factory for MG Si production «Каzsilicon» is situated. Upgrading of MGSi up to SoGSi consists is a number of technological steps and SoGSi is basis for PV industry. Therefore the cost of SoGSi determines the competitiveness of PV technology compared to other energy sources. There are several chemical and metallurgical technologies for SoGSi production. This paper briefly describes these technologies and shows main advantages of metallurgical technologies based on slag refining (oxygenation). Considered technologies are the basis for industrial production of SoGSi, solar cells with an efficiency of 15.8-17.1% and solar panels. The 1st power plant made from solar panels in Kazakhstan was launched in December 25, 2012 by «AstanaSolar» with a total capacity of 250 kW.
The methods of purification of "Kazsilicon" metallurgical silicon produced by the carbothermal method, i.e., the reduction of high purity Sary Kol quartz into carbon, are developed. These technologies provide the basis for the industrial production of silicon, solar cells, panels, and solar power plants. Using these technologies, solar grade silicon is produced, on the basis of which solar cells with an efficiency of 15.8-17.1% are fabricated. Panels of solar cells compose the "Astana Solar", i.e., the first solar power plant in Kazakhstan with a power of 250 kW, which was put into operation December 25, 2012.
Intrinsic and extrinsic nature of the luminescence of pure and Eu3+ and Tb3+ rare-earth ions activated mesoporous silica has been investigated by spectroscopic methods. Increasing the Eu3+ impurity concentration from 0.01 mg to 7 mg, results in an increase of the impurity particles radiation in the luminescent mesoporous colloidal silica (LMCS) matrix by several times. With an increase in the concentration of Tb3+ from 0.01 mg to 3 mg, impurity luminescence intensity increases several times while the intrinsic luminescence intensity maximum at 400 and 460 nm is decreasing. Based on the experimental evidence, it is suggested that the energy of the own electronic matrix excitation is transferred by emitters, i.e., impurities of Eu3+ and Tb3+ ions. Also, it is assumed that the emission band at 610 nm in an LMCS—Eu3+ and emission band at 543 nm in the LMCS—Tb3+ is attributed to the intracenter transitions within the Eu3+ and Tb3+ ions.
In the frame of permanent objective to increase solar cell efficiency and to decrease production cost the monolike ingot process was designed which combine multicrystalline (mc) productivity and monocrystalline structure performances. As a raw material the mc-Solar Grade silicon (SoG-Si) was used because it is less expensive than the Si purified by gas chemical route (Siemens process or equivalent), Usage of the mc-SoG-Si for growing silicon ingots by monolike process should contribute to the ingot and wafer manufacturing cost decrease. SoG silicon using would be developed all the more fast since it enables to produce high efficiency solar cells. It is why the monolike process have been tested and optimized for Kazakhstan mc-SoG silicon. The objective of this work was study of the higher level content impurities influences on the crystal defect generation (mainly dislocations) of the monocrystalline structure. Visual monocrystalline structure, minority carrier lifetime mapping, and photoluminescence techniques were used to study the monolike ingots obtained from Kazakhstan’s mc-SoG silicon.
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