This work aims to present a co the drain current for short channel double transistors, from a charge-based model for lon gate devices. The proposed model is based on t drain bias in the channel potential and the effective channel length in saturation regime, transistors. To model validation it will be used numerical simulations.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.