Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors

Hernandez-Barrios, Y.; Avila, Fernando; Estrada, M.; Cerdeira, A.; Moldovan, Oana; Iñı́guez, Benjamı́n; Picos, R.

doi:10.1109/iceee.2016.7751186

Cited by 1 publication

(1 citation statement)

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“…Many of the memory transistors are based on hysteresis effects present in their electrical characteristics, in which the charge trapping at the semiconductor-dielectric interface in both metal-oxidesemiconductor field-effect transistors (MOSFETs) or TFTs plays an important role [23,25,[27][28][29][30][31], apart from affecting its low-frequency noise and light-sensitive characteristics [19][20][21][22]. While it is considered a desirable feature in memory devices, hysteresis in the electrical characteristics of other devices can be a serious constraint, in particular in transistors in which electrical stability is a requirement for proper performance [32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Compact Modeling of Hysteresis in Organic Thin-Film Transistors

Romero,

Jiménez-Tejada,

Picos

et al. 2024

Preprint

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In this work, we propose a model that describes the temporal evolution of the threshold voltage and trapped charge density in Thin-Film Transistors (TFTs) under dynamic conditions, paving the way for the characterization and modeling of memory transistors. The model is expressed as a first-order differential equation for the trapped charge density, which is controlled by a time constant and an independent term proportional to the drain current. The time-dependent threshold voltage is introduced in a previously developed compact model for TFTs with special consideration to the contact effects. The combination of both models and the use of an evolutionary parameter extraction procedure allow for reproducing the experimental dynamic behavior of TFTs. The results of the model and the evolutionary procedure have been validated with published experimental data of pentacene-based transistors. The procedure is able to simultaneously reproduce three kinds of experiments with different initialization routines and constraints in each of them: output and transfer characteristics with hysteresis and current transients characteristics. ✩ The authors acknowledge support from the project PID2022-139586NB-44 funded by MCIN/AEI/10.13039/501100011033 and FEDER, EU. Funding for open access charge: Universidad de Granada / CBUA.

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