Improved continuous model for short channel double-gate junctionless transistors

Channel charge model of a dual-gate junctionless transistor

“…Similarly, the 2D model proposed in [5] is only valid in subthreshold. The model presented in [6] requires in fact numerical calculation of the surface potential, thus is not a true analytical model. The most mature and in-depth work [7], presenting a lot of useful physical relationships in a JL device, still fails to propose a closed-form expression for channel charge as a function of the gate voltage.…”