The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the weak localization are controlled by the spin splitting of electron spectra. A theory is developed which takes into account both linear and cubic in electron wave vector terms in spin splitting, which arise due to the lack of inversion center in the crystal, as well as the linear terms which appear when the well itself is asymmetric. It is established that, unlike spin relaxation rate, contributions of different terms into magnetoconductivity are not additive. It is demonstrated that in the interval of electron densities under investigation ((0.98 − 1.85)·1012 cm −2 ) all three contribution are comparable and have to be taken into account to achieve a good agreement between the theory and experiment. The results obtained from comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin relaxation in quantum wells and to improve the accuracy of determination of spin splitting parameters in A3B5 crystals and 2D structures. 73.20.Fz,73.70.Jt,71.20.Ej,72.20.My

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Influences of δdoping time and spacer thickness on the mobility and twodimensional electron gas concentration in δdoped GaAs/InGaAs/GaAs pseudomorphic heterostructures J. Vac. Sci. Technol. B 12, 154 (1994); 10.1116/1.587174 Very high twodimensional electron gas concentrations with enhanced mobilities in selectively doubleδ doped GaAs/InGaAs pseudomorphic single quantum well heterostructures

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Spin relaxation in degenerated two-dimensional (2D) electron gas is studied by measurements of the magnetic field dependence of the weak antilocalization corrections to the conductivity in GaInAs quantum wells. Consistent quantitative (up to order of magnitude) description of weak antilocalization data on GaAs like heterojunctions and quantum wells was obtained. Our results show that spin precession around the effective magnetic field direction as described by the Dyakonov-Perel model is the main spin relaxation mechanism in degenerated 2D electron gas in semiconductors with no inversion symmetry.